CN101159388B - Rectifier circuit, semiconductor device using the circuit, and driving method therefor - Google Patents

Rectifier circuit, semiconductor device using the circuit, and driving method therefor Download PDF

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Publication number
CN101159388B
CN101159388B CN2007101499587A CN200710149958A CN101159388B CN 101159388 B CN101159388 B CN 101159388B CN 2007101499587 A CN2007101499587 A CN 2007101499587A CN 200710149958 A CN200710149958 A CN 200710149958A CN 101159388 B CN101159388 B CN 101159388B
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China
Prior art keywords
diode
rectification circuit
film
electrode
variable capacitor
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CN2007101499587A
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CN101159388A (en
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长多刚
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
    • G06K19/0715—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management the arrangement including means to regulate power transfer to the integrated circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/4815—Resonant converters
    • H02M7/4818—Resonant converters with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

An object of the present invention is to provide a rectifier circuit (101,201,501,601,701,801) which can suppress loss of power due to parasitic capacitance or parasitic inductance of a semiconductor element. The rectifier circuit comprises a variable capacitor (103,203,503,603,703,803) and matches or mismatches impedance between a circuit of a previous stage and the rectifier circuit by changing the value of the capacitor. When an AC voltage to be input has a smaller amplitude than a predetermined voltage, impedance is matched and the AC voltage is applied as is to the rectifier circuit. Conversely, when an AC voltage to be input has a larger amplitude than a predetermined voltage, impedance is mismatched, and the amplitude of the AC voltage is decreased by reflection and then the AC voltage is applied to the rectifier circuit.

Description

Rectification circuit, the semiconductor device that uses this rectification circuit and driving method thereof
Technical field
The present invention relates to a kind of rectification circuit that has concurrently as the function of amplitude limiter.The invention still further relates to and a kind ofly can utilize semiconductor device and the driving method thereof that carries out radio communication by the voltage of this rectification circuit rectification.
Background technology
And combination has between the medium (label) of integrated circuit and antenna the technology (RFID with non-contacting mode receiving and transmitting signal; REID) obtained actual the use, and be expected to further expand its market as a kind of form of new information communication in various fields.The shape that is used for the label of RFID under many circumstances is card shape or the more small-sized shaped like chips of ratio card shape, but can have various shapes according to its purposes.
In RFID, can utilize electric wave to carry out the communication between label and the reader.Particularly, the antenna of electric wave label of launching from reader converts the signal of telecommunication into, and the integrated circuit in label moves according to this signal of telecommunication.And modulated electric wave can send signal to reader with non-contacting mode through the signal of telecommunication from antenna emission basis from integrated circuit output.
Notice that label roughly is divided into active type and passive two types.Primary cell is equipped with in active type inside, and in label, does not produce electric energy.
On the other hand, passive can be used in label, produce electric energy from the electric wave of reader.Particularly,, after antenna converts alternating voltage into, make this ac voltage rectifier at rectification circuit, and be supplied in each circuit in the label at the electric wave that will receive from reader.Therefore, high more at the energy of the receivable electric wave of antenna, can produce high more electric energy.But, depend on regulation from the intensity of the electric wave of reader emission, thereby the electric energy that in label, produces is usually all in preset range.
But if comprise noise or launch undesired radiation from the electronic equipment beyond the reader from the electric wave of reader, then label is exposed to the powerful electric wave that surpasses regulation.In the case, in antenna, produce the excessive alternating voltage that surpasses preset range.Its result is supplied to the current value in the semiconductor element in the integrated circuit sharply to increase, and integrated circuit just might be owing to insulation damages is damaged or deterioration.
Especially under the situation of utilizing high-frequency wave to communicate in order to prolong communication distance, there is the trend that makes the semiconductor element miniaturization that constitutes integrated circuit, so that can make the further high speed motion of integrated circuit.But if make the semiconductor element miniaturization, then its withstand voltage further reduction, and label receives the influence of overcurrent more easily and damages.
In addition, when the intensity of the electric wave the when intensity of the electric wave when the communication distance between label and reader is near is far away with the communication distance between label and reader was identical, the communication distance between label and the reader was near more, and the electric energy that produces at label is big more.Therefore, there is following situation, promptly produces unnecessary unwanted electric energy in short-term at communication distance.
So for the reliability that improves label, it is very effective in integrated circuit, the amplitude limiter with the function of emitting unnecessary unwanted electric energy being set.Amplitude limiter has a kind of function, the voltage that is about to output suppresses for below the setting voltage (deboost), and no matter the voltage of having imported how.Through using amplitude limiter to prevent because the deterioration or the damage of the semiconductor element that above-mentioned overcurrent causes.
In label, because overcurrent, the circuit of the easiest deterioration of semiconductor element or damage is the circuit of directly importing from the alternating voltage of antenna.Rectification circuit is one of them.The rectification circuit that will be arranged on input one side as the diode of amplitude limiter is described in following patent documentation 1.
[patent documentation 1] japanese patent application laid is opened 2002-176141 communique (the 6th page, the 1st figure)
Yet, under situation about amplitude limiter being arranged between antenna and the rectification circuit, there is following problem, even do not produce overcurrent, also because parasitic capacitance or stray inductance in the amplitude limiter and rectification circuit and ground connection (GND) side short circuit, thereby consumes electric power.
Figure 19 A illustrates the general structure of antenna 1901, amplitude limiter 1902 and rectification circuit 1903.Amplitude limiter 1902 and rectification circuit 1903 are equivalent to the part of integrated circuit, and amplitude limiter 1902 is connected with terminal A1 and the terminal A2 that antenna 1901 is had.In addition, rectification circuit 1903 is connected to the back level of amplitude limiter 1902.
Figure 19 B illustrates the equivalent circuit diagram of the antenna 1901 shown in Figure 19 A, amplitude limiter 1902 and rectification circuit 1903.Notice that Figure 19 B is illustrated in terminal A2 is connected to the circuit diagram under the state of GND.Antenna 1901 has the inductor 1910 and resonant capacitor 1911 that is connected in parallel.Amplitude limiter 1902 has the switch 1912 of the connection between control terminal A1 and the terminal A2.In addition, in the back level of amplitude limiter 1902, rectification circuit 1903 is connected to terminal A1 and terminal A2.
When the voltage that will be lower than regulation was applied between terminal A1 and the terminal A2, switch 1912 broke off, and is applied to the voltage former state between terminal A1 and terminal A2 rectification circuit 1903.And when the voltage that amplitude is higher than regulation was applied between terminal A1 and the terminal A2, because switch 1912 short circuits and overcurrent flows to terminal A2 (GND) side, the result suppressed to be applied to the voltage of rectification circuit 1903.
Because switch 1912 uses semiconductor elements such as transistor or diode to form usually, so have parasitic capacitance or stray inductance.Therefore, when high-frequency alternating voltage being applied between terminal A1 and the terminal A2, even under the situation that switch 1912 breaks off, also owing to this parasitic capacitance or stray inductance, this alternating voltage also is applied to terminal A2 one side, thereby can lose electric power.Because the electric energy that in label, can form is limited, so reality is to avoid undesirable power loss as far as possible.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of rectification circuit, this rectification circuit can suppress because the loss of the electric power that parasitic capacitance that semiconductor element had or stray inductance cause.And, the invention still further relates to and a kind ofly can utilize semiconductor device and the driving method thereof that carries out radio communication by the voltage of this rectification circuit rectification.
One of technical scheme of rectification circuit of the present invention is: make in the circuit and impedance phase between this rectification circuit coupling of prime or do not match according to the amplitude of the alternating voltage of having imported.When the amplitude of alternating voltage of input is equal to or less than the regulation amplitude, make impedance matching, and with this alternating voltage former state be applied to rectification circuit.And during amplitude, impedance is not matched greater than regulation, and utilize reflection to reduce the amplitude of this alternating voltage and be applied to rectification circuit at the amplitude of the alternating voltage of input.
In the present invention, variable capacitance is set in rectification circuit, and uses this variable capacitance to regulate the input impedance of rectification circuit.Say that at length the capacitance of variable capacitance changes according to the amplitude that is input to the alternating voltage of rectification circuit.And the reactance of imaginary part that is equivalent to the input impedance of rectification circuit changes according to the capacitance of variable capacitance.Therefore, change the capacitance of this variable capacitance, and can make the impedance matching between the circuit of rectification circuit and prime or do not match through amplitude according to alternating voltage.
Do not match can be through making rectification circuit input impedance realize that greater than the output impedance of the circuit of prime and input impedance that also can be through making rectification circuit realizes less than the output impedance of the circuit of prime.
In addition, one of technical scheme of semiconductor device of the present invention is: make the impedance phase coupling between antenna and the rectification circuit or do not match according to the amplitude of the alternating voltage that produces at antenna.When the amplitude of the alternating voltage that produces at antenna is equal to or less than the regulation amplitude, make impedance matching, and with this alternating voltage former state be applied to rectification circuit.And when the amplitude of the alternating voltage that produces at antenna during greater than the regulation amplitude, impedance is not matched, and utilize reflection to reduce the amplitude of this alternating voltage and be applied to rectification circuit.
In semiconductor device of the present invention, variable capacitance is set in rectification circuit.The capacitance of this variable capacitance is depended in the reactance of imaginary part that is equivalent to the input impedance of rectification circuit.Whether the capacitance that therefore, can change this variable capacitance through the amplitude according to alternating voltage selects impedance to mate.Input impedance that can be through making rectification circuit does not match impedance greater than the output impedance of antenna.And input impedance that also can be through making rectification circuit does not match impedance less than the output impedance of antenna.
Variable capacitance has at least two electrodes.In addition, antenna has at least two terminals.And in rectification circuit, the alternating voltage that variable capacitance is connected to any supply two terminals that have from antenna is applied to any in two electrodes of variable capacitance.
Notice that semiconductor device of the present invention has integrated circuit at least and gets final product, and also can not have antenna.The integrated circuit that semiconductor device of the present invention had comprises makes ac voltage rectifier that produces at antenna and the rectification circuit that produces DC power supply voltage; The computing circuit that uses this supply voltage and move; And use the signal that produces from this computing circuit to come the modulation circuit of modulated electric wave to get final product.
Rectification circuit of the present invention has the function as amplitude limiter concurrently, so even be not so good as conventional such prime at rectification circuit amplitude limiter is set, also can suppress because the deterioration or the damage of the semiconductor element in the rectification circuit that overcurrent causes.
And; Even be not exposed at semiconductor device under the situation of excessive electric wave; Also can avoid following situation: owing to be used as parasitic capacitance or the stray inductance that the semiconductor element of the switch of amplitude limiter has in advance, with ground connection (GND) side short circuit, thus consumes electric power.In the present invention, because the reflection that impedance does not match and produces, the amplitude suppressing of the alternating voltage that can produce at antenna is little through specially utilizing.Therefore, in the deterioration or damage of the semiconductor element in preventing the rectification circuit that causes owing to overcurrent, and can improve the reliability of semiconductor device.And, through suppressing the loss of the electric power in the semiconductor device, can make the further multifunction of semiconductor device or prolong communication distance.
Description of drawings
Figure 1A and 1B are the circuit diagrams that the structure of rectification circuit of the present invention is shown;
Fig. 2 A and 2B are the circuit diagrams that the structure of rectification circuit of the present invention is shown;
Fig. 3 A and 3B are the circuit diagrams that the structure of rectification circuit of the present invention is shown;
Fig. 4 A and 4B are the figure that the characteristic of MOS varactor is shown;
Fig. 5 is the circuit diagram that the structure of rectification circuit of the present invention is shown;
Fig. 6 is the circuit diagram that the structure of rectification circuit of the present invention is shown;
Fig. 7 is the circuit diagram that the structure of rectification circuit of the present invention is shown;
Fig. 8 is the circuit diagram that the structure of rectification circuit of the present invention is shown;
Fig. 9 is the block diagram that the structure of semiconductor device of the present invention is shown;
Figure 10 A and 10B are the figure that the outward appearance of semiconductor device of the present invention is shown;
Figure 11 is the vertical view of rectification circuit of the present invention;
Figure 12 A to 12C is the figure that the manufacturing approach of semiconductor device of the present invention is shown;
Figure 13 A to 13C is the figure that the manufacturing approach of semiconductor device of the present invention is shown;
Figure 14 A and 14B are the figure that the manufacturing approach of semiconductor device of the present invention is shown;
Figure 15 A and 15B are the figure that the manufacturing approach of semiconductor device of the present invention is shown;
Figure 16 A to 16C is the figure that the manufacturing approach of semiconductor device of the present invention is shown;
Figure 17 A to 17C is the figure that the manufacturing approach of semiconductor device of the present invention is shown;
Figure 18 A and 18B are the figure that the manufacturing approach of semiconductor device of the present invention is shown;
Figure 19 A and 19B are the figure that the structure of conventional semiconductor device is shown.
Embodiment
Below, will be with reference to description of drawings preferred implementation of the present invention.But; The present invention can implement through different ways, and the ordinary person of affiliated technical field can understand a fact at an easy rate, and to be exactly its mode and detailed content can be transformed to various forms not breaking away under aim of the present invention and the scope thereof.Therefore, the present invention should not be interpreted as only for fixing in the content that this execution mode puts down in writing.
Execution mode 1
Use Figure 1A and 1B that the structure of rectification circuit of the present invention is described.In Figure 1A, rectification circuit 101 is connected to terminal A1, the terminal A2 that antenna 102 is had, and the terminal A1 that had of antenna 102, terminal A2 are as the input of rectification circuit 101.Notice that though Figure 1A shows the situation that antenna 102 has coiled type, the shape that is used for antenna of the present invention is not limited to this.Utilize not utilizing magnetic field under the situation that electric field communicates, antenna 102 needn't have coiled type.
The level and smooth smoothing capacity 106 of voltage that rectification circuit 101 has variable capacitance 103, be used for making diode 104 and the diode 105 that is applied to the ac voltage rectifier between terminal A1 and the terminal A2 and be used for making the rectification change.Variable capacitance 103 has at least two electrodes.According to the magnitude of voltage that is applied between this first electrode and second electrode, the capacitance variation of variable capacitance 103.In this execution mode, use varicap as variable capacitance 103.
Smoothing capacity 106 is connected between the output OUT1 and output OUT2 that rectification circuit 101 had.Note, though in the rectification circuit shown in Figure 1A, with smoothing capacity 106 be used for level and smooth rectification change voltage, also can not must have smoothing capacity 106.Yet, through using smoothing capacity 106, can reduce composition such as rectification change beyond the direct current the ripple that voltage had (ripple) etc.
In addition, the number and the connected mode thereof of the diode that had of rectification circuit 101 are not limited to the structure shown in Figure 1A.In rectification circuit 101 of the present invention, at least two diodes 104,105 are connected to the forward unanimity of series connection and each diode.And; In above-mentioned two diodes 104,105 one is connected in series between the output OUT1 of second electrode of variable capacitance 103 and rectification circuit 101, and another is connected in series between the output OUT2 of second electrode of variable capacitance 103 and rectification circuit 101.
Particularly, in the rectification circuit shown in Figure 1A 101, first electrode that variable capacitance 103 is had is connected to terminal A1.In addition, second electrode that had of variable capacitance 103 is connected to first electrode (anode) that second electrode (negative electrode) that diode 104 had and diode 105 are had.First electrode (anode) that diode 104 is had is connected to terminal A2 and output OUT2.Second electrode (negative electrode) that diode 105 is had is connected to output OUT1.First electrode that smoothing capacity 106 is had is connected to output OUT1, and second electrode that smoothing capacity 106 is had is connected to output OUT2.
Figure 1B illustrates the equivalent circuit diagram of rectification circuit 101 shown in the Figure 1A when terminal A2 is connected to ground connection (GND) and antenna 102.
Antenna 102 has inductor 107 and resonant capacitor 108.Inductor 107 has at least two terminals, and one of them terminal is connected to terminal A1, and another terminal is connected to GND.In addition, resonant capacitor 108 has at least two electrodes, and one of them electrode is connected to terminal A1, and another electrode is connected to GND.Through inductor 107 and the resonant capacitor 108 of being connected in parallel like this, in antenna 102, form tank circuit.
In addition, in Figure 1B, first electrode that diode 104 is had is connected to GND, and second electrode that smoothing capacity 106 is had is connected to GND.
When antenna 102 is exposed to the electric wave with specific range of wavelengths, in antenna 102, produce AC electromotive force, alternating voltage is applied between terminal A1 and the terminal A2.
Be applied to terminal A1 if be higher than the voltage Vh of terminal A2, then this voltage Vh is supplied to first electrode of variable capacitance 103.Because at second electrode, the one side storage negative electrical charge of variable capacitance 103, thereby the voltage (being GND in the case) that the voltage of second electrode of variable capacitance 103 becomes and is lower than terminal A2.So diode 104 is connected (ON), and the voltage of terminal A2 (being GND in the case) is supplied to second electrode of variable capacitance 103.Then, if be lower than terminal A2 voltage V1 (=-Vh) be applied to terminal A1, then this voltage V1 is supplied to first electrode of variable capacitance 103.Here, owing to the electric charge that is stored in the variable capacitance 103 is preserved, thereby the voltage of second electrode of variable capacitance 103 becomes 2 times the height of voltage Vh.Diode 104 turn-offs (OFF) and diode 105 is connected, and 2 times the voltage of voltage Vh is supplied to output OUT1.
Notice that variable capacitance 103 changes its capacitance according to the magnitude of voltage that is applied to first electrode.Can change the input impedance of rectification circuit 101 according to the capacitance of variable capacitance 103.Therefore, preestablish the voltage of first electrode that is applied to variable capacitance 103 and the relation between the capacitance in the design phase.In other words, under the situation of magnitude of voltage in preset range of first electrode that is applied to variable capacitance 103, preestablish the characteristic of variable capacitance 103, so that between rectification circuit 101 and antenna 102, realize the coupling of impedance.In addition, be applied at the large amplitude voltage that surpasses preset range under the situation of first electrode of variable capacitance 103, preestablish the characteristic of variable capacitance 103, so that between rectification circuit 101 and antenna 102, realize not matching of impedance.
Under the situation that adopts the rectification circuit 101 shown in Figure 1B, when the voltage in preset range is applied to first electrode that variable capacitance 103 had, the impedance phase coupling between rectification circuit 101 and antenna 102.And the alternating voltage that is applied to first electrode that variable capacitance 103 had is applied to the semiconductor element of the back level of variable capacitance 103.Particularly, be applied to second electrode of diode 104 and first electrode of diode 105.
On the other hand, in the rectification circuit shown in Figure 1B 101, if first electrode that variable capacitance 103 is had applies the large amplitude voltage above preset range, then the capacitance of variable capacitance 103 reduces.Under the situation of the variable capacitance 103 that is equivalent in employing to be connected in series between terminal A1 and the output OUT1 of input of rectification circuit 101; When ω is set at angular frequency; C is set at capacitance, and when j was set at imaginary unit, impedance Z was represented by 1/ (j ω C).Therefore, the capacitance of variable capacitance 103 is more little, and the input impedance of rectification circuit 101 is big more, thereby can between rectification circuit 101 and antenna 102, impedance not matched.Its result, the alternating voltage that is applied to first electrode suppresses its amplitude because of reflection, and is applied to the semiconductor element of the back level of variable capacitance 103.Particularly, be applied to second electrode of diode 104 and first electrode of diode 105.
Notice that the designer is according to mating or unmatched border because the magnitude of voltage that reflection descends suitably sets.For example; The amplitude of the alternating voltage that will produce at antenna 102 and in fact be input to rectification circuit 101 alternating voltage amplitude by comparison; When the degree of voltage decline is lower than 3%, can be judged as and realize coupling; And when the decline degree of voltage be 10% can be judged as when above and do not realize promptly not matching coupling.
Note, in actual design, through also considering the characteristic impedance of wiring, can form the rectification circuit of characteristic with further adaptation design.
The rectification circuit of this execution mode has variable capacitance, and constitutes according to input voltage and the capacitance variation of this variable capacitance.The variation of the capacitance of variable capacitance changes the input impedance of rectification circuit, and works with reflecting input signal.By means of this effect, excessive alternating voltage is applied to rectification circuit, and can suppress because the deterioration or the damage of the semiconductor element in the rectification circuit that overcurrent causes.
Note, modulate to possess the semiconductor device of this rectification circuit and the communication between the reader through reflected wave to the carrier wave that sends from reader.Compare with the reflection electric power of the amplitude of the alternating voltage that is used for suppressing being input to rectification circuit, the reflected wave in this communication is fully big.Therefore, has following advantage: even when impedance is not matched, also be not easy to hinder the transmission of signal.
Like this, rectification circuit of the present invention has the characteristic that changes input impedance, so that do not import excessive alternating voltage.The deterioration or the damage of the semiconductor element of diode 104,105 in the rectification circuit 101 that therefore, can suppress to cause and smoothing capacity 106 etc. owing to overcurrent.In addition, also can amplitude limiter be set not as conventional such prime at rectification circuit, so can avoid following situation: because parasitic capacitance or a stray inductance and ground connection (GND) side short circuit that amplitude limiter had, thereby consumes electric power.
Notice that the kind and the number that are used for the semiconductor element of rectification circuit 101 are not limited to the structure shown in this execution mode.Except the semiconductor element shown in Figure 1A, can also suitably add resistance, electric capacity, diode, inductor, switch etc., so that obtain further near desirable rectification characteristic.
Execution mode 2
Use Fig. 2 A and 2B that the structure of rectification circuit of the present invention is described.In Fig. 2 A, rectification circuit 201 is connected to terminal A1, the terminal A2 that antenna 202 is had, and the terminal A1 that had of antenna 202, terminal A2 are as the input of rectification circuit 201.Notice that though Fig. 2 A shows the situation that antenna 202 has coiled type, the shape that is used for antenna of the present invention is not limited to this.Utilize not utilizing magnetic field under the situation that electric field communicates, antenna 202 needn't have coiled type.
Rectification circuit 201 has variable capacitance 203, be used for making the diode 204 that is applied to the ac voltage rectifier between terminal A1 and the terminal A2 and diode 205, as the resistance 209 of low pass filter and be used for the voltage from rectification circuit output is become 2 times electric capacity 210.Variable capacitance 203 has at least two electrodes.According to the magnitude of voltage that is applied between this first electrode and second electrode, the capacitance variation of variable capacitance 203.In this execution mode, use varicap as variable capacitance 203.
The number and the connected mode thereof of the diode that rectification circuit 201 is had are not limited to the structure shown in Fig. 2 A.In rectification circuit 201 of the present invention, at least two diodes 204,205 are connected to the forward unanimity of series connection and each diode.And in above-mentioned two diodes 204,205 one is connected in series between the output OUT1 of second electrode of electric capacity 210 and rectification circuit 201, and another is connected in series between the output OUT2 of second electrode of electric capacity 210 and rectification circuit 201.
Particularly, in the rectification circuit shown in Fig. 2 A 201, first electrode that electric capacity 210 is had is connected to terminal A1.In addition, second electrode that had of electric capacity 210 is connected to the first terminal that resistance 209 is had.Second terminal that resistance 209 is had is connected to first electrode (anode) that first electrode that variable capacitance 203 had, second electrode (negative electrode) that diode 204 is had and diode 205 are had.First electrode (anode) that second electrode that variable capacitance 203 is had and diode 204 are had is connected to terminal A2 and output OUT2.Second electrode (negative electrode) that diode 205 is had is connected to output OUT1.
Fig. 2 B illustrates the equivalent circuit diagram of rectification circuit 201 shown in Fig. 2 A when terminal A2 is connected to ground connection (GND) and antenna 202.
Antenna 202 has inductor 207 and resonant capacitor 208.Inductor 207 has at least two terminals, and one of them terminal is connected to terminal A1, and another terminal is connected to GND.In addition, resonant capacitor 208 has at least two electrodes, and one of them electrode is connected to terminal A1, and another electrode is connected to GND.Through inductor 207 and the resonant capacitor 208 of being connected in parallel like this, in antenna 202, form tank circuit.
In addition, in Fig. 2 B, first electrode that diode 204 is had is connected to GND, and second electrode that variable capacitance 203 is had is connected to GND.
When antenna 202 is exposed to the electric wave with specific range of wavelengths, in antenna 202, produce AC electromotive force, alternating voltage is applied between terminal A1 and the terminal A2.
Be applied to terminal A1 if be higher than the voltage Vh of terminal A2, then this voltage Vh is supplied to first electrode of electric capacity 210.Because at second electrode, the one side storage negative electrical charge of electric capacity 210, thereby the voltage (being GND in the case) that the voltage of second electrode of electric capacity 210 becomes and is lower than terminal A2.So diode 204 is connected (ON), and the voltage of terminal A2 (being GND in the case) is supplied to second electrode of electric capacity 210.Then, if be lower than terminal A2 voltage V1 (=-Vh) be applied to terminal A1, then this voltage V1 is supplied to first electrode of electric capacity 210.Here, owing to the electric charge that is stored in the electric capacity 210 is preserved, thereby the voltage of second electrode of electric capacity 210 becomes 2 times the height of voltage Vh.Diode 204 turn-offs (OFF) and diode 205 is connected, and 2 times the voltage of voltage Vh is supplied to output OUT1.
Variable capacitance 203 changes its capacitance according to the magnitude of voltage that is applied to first electrode.Can change the input impedance of rectification circuit 201 according to the capacitance of variable capacitance 203.Therefore, preestablish the voltage of first electrode that is applied to variable capacitance 203 and the relation between the capacitance in the design phase.In other words, under the situation of magnitude of voltage in preset range of first electrode that is applied to variable capacitance 203, preestablish the characteristic of variable capacitance 203, so that between rectification circuit 201 and antenna 202, realize the coupling of impedance.In addition, be applied at the large amplitude voltage that surpasses preset range under the situation of first electrode of variable capacitance 203, preestablish the characteristic of variable capacitance 203, so that between rectification circuit 201 and antenna 202, realize not matching of impedance.
Under the situation that adopts the rectification circuit 201 shown in Fig. 2 A, when the voltage in preset range is applied to first electrode that variable capacitance 203 had, the impedance phase coupling between rectification circuit 201 and antenna 202.And the alternating voltage that is applied to first electrode of electric capacity 210 is applied to the semiconductor element of the back level of variable capacitance 203.Particularly, be applied to second electrode of diode 204 and first electrode of diode 205.
On the other hand, in the rectification circuit shown in Fig. 2 B 201, if first electrode that variable capacitance 203 is had applies the large amplitude voltage above preset range, then the capacitance of variable capacitance 203 increases.Under the situation of the variable capacitance 203 that is equivalent in employing to be connected in series between terminal A1 and the output OUT2 of input of rectification circuit 201; When ω is set at angular frequency; C is set at capacitance, and when j was set at imaginary unit, impedance Z was represented by 1/ (j ω C).Therefore, the capacitance of variable capacitance 203 is big more, and the input impedance of rectification circuit 201 is more little, thereby can between rectification circuit 201 and antenna 202, impedance not matched.Its result, the alternating voltage that is applied to first electrode of electric capacity 210 suppresses its amplitude because of reflection, and is applied to the semiconductor element of the back level of variable capacitance 203.Particularly, be applied to second electrode of diode 204 and first electrode of diode 205.
Notice that the designer is according to mating or unmatched border because the magnitude of voltage that reflection descends suitably sets.In addition, in actual design, through also considering the characteristic impedance of wiring, can form the rectification circuit of characteristic with further adaptation design.
Like this, rectification circuit of the present invention can utilize and reflect the amplitude that suppresses alternating voltage.The deterioration or the damage of the semiconductor element of the diode 204,205 in the rectification circuit 201 that therefore, can suppress to cause etc. owing to overcurrent.In addition, also can amplitude limiter be set not as conventional such prime at rectification circuit, so can avoid following situation: because parasitic capacitance or a stray inductance and ground connection (GND) side short circuit that amplitude limiter had, thereby consumes electric power.
Notice that the kind and the number that are used for the semiconductor element of rectification circuit 201 are not limited to the structure shown in this execution mode.Except the semiconductor element shown in Fig. 2 A, can also suitably add resistance, electric capacity, diode, inductor, switch etc., so that obtain further near desirable rectification characteristic.
Execution mode 3
In this execution mode, explain and use the structure of MOS (metal-oxide semiconductor (MOS)) varactor (varactor) as the rectification circuit of variable capacitance.
Fig. 3 A illustrates a mode of the rectification circuit of the present invention that uses the MOS varactor.The instance that uses the variable capacitance 103 that the MOS varactor had as the rectification circuit shown in Figure 1A 101 has been shown in Fig. 3 A.In addition, the instance of use MOS transistor as diode 104 and diode 105 has been shown in Fig. 3 A.
MOS varactor as variable capacitance 103 is the p channel type MOS transistor that source region (S) and drain region (D) are electrically connected.The gate electrode of this MOS transistor (G) is equivalent to first electrode of variable capacitance 103.In addition, source region (S) and drain region (D) is equivalent to second electrode of variable capacitance 103.
Transistor as diode 104 is the n channel type MOS transistor that source region (S) and gate electrode (G) are electrically connected.Source region of this MOS transistor (S) and gate electrode (G) are equivalent to first electrode (anode) of diode 104, and drain region (D) is equivalent to second electrode (negative electrode) of diode 104.
Transistor AND gate diode 104 as diode 105 is same, is the n channel type MOS transistor that source region (S) and gate electrode (G) are electrically connected.Source region of this MOS transistor (S) and gate electrode (G) are equivalent to first electrode (anode) of diode 105, and drain region (D) is equivalent to second electrode (negative electrode) of diode 105.
Notice that in Fig. 3 A, though use the p channel type MOS transistor to form the MOS varactor, the present invention is not limited to this structure.Also can use the n channel type MOS transistor to form the MOS varactor.But, under situation about being connected in series between terminal A1 and the output OUT1, preferably use the p channel type MOS transistor as the MOS varactor at MOS varactor as Fig. 3 A.This is because following cause: MOS varactor such utilization shown in Fig. 4 A of using the p channel type MOS transistor to form moved by dotted line 401 area surrounded.Therefore, the voltage that is applied to first electrode is high more, and the capacitance of variable capacitance 103 is more little, and impedance is big more.Because impedance can handle with the resistance of DC circuit in form equally, thereby impedance can suppress to be supplied to the amplitude of alternating current of second electrode of variable capacitance 103 more greatly more.Therefore, can further be suppressed at second electrode and the middle insulation damages that causes owing to electric current that produces of the semiconductor element between the output OUT1 (being diode 105 in the case) that is connected to variable capacitance 103 efficiently.Likewise, can further be suppressed at second electrode and the middle insulation damages that causes owing to electric current that produces of the semiconductor element between the output OUT2 (being diode 104 in the case) that is connected to variable capacitance 103 efficiently.
In addition, in Fig. 3 A, though use the n channel type MOS transistor to form diode 104 and diode 105, the present invention is not limited to this structure.Also can use the p channel type MOS transistor to form diode 104 and diode 105.But in the case, the drain region of MOS transistor (D) is equivalent to first electrode (anode) of diode 104,105, and source region (S) and gate electrode (G) are equivalent to second electrode (negative electrode) of diode 104,105.
Fig. 3 B illustrates the mode of the rectification circuit of the present invention of the use MOS varactor different with Fig. 3 A.The instance that uses the variable capacitance 203 that the MOS varactor had as rectification circuit 201 shown in Fig. 2 A has been shown in Fig. 3 B.In addition, the instance of use n channel type MOS transistor as diode 204 and diode 205 has been shown in Fig. 3 B.
MOS varactor as variable capacitance 203 is the n channel type MOS transistor that source region (S) and drain region (D) are electrically connected.The gate electrode of this MOS transistor (G) is equivalent to first electrode of variable capacitance 203.In addition, source region (S) and drain region (D) is equivalent to second electrode of variable capacitance 203.
Transistor as diode 204 is the n channel type MOS transistor that source region (S) and gate electrode (G) are electrically connected.Source region of this MOS transistor (S) and gate electrode (G) are equivalent to first electrode (anode) of diode 204, and drain region (D) is equivalent to second electrode (negative electrode) of diode 204.
Transistor AND gate diode 204 as diode 205 is same, is the n channel type MOS transistor that source region (S) and gate electrode (G) are electrically connected.Source region of this MOS transistor (S) and gate electrode (G) are equivalent to first electrode (anode) of diode 205, and drain region (D) is equivalent to second electrode (negative electrode) of diode 205.
Notice that in Fig. 3 B, though use the n channel type MOS transistor to form the MOS varactor, the present invention is not limited to this structure.Also can use the p channel type MOS transistor to form the MOS varactor.But, under situation about being connected in series between terminal A1 and the output OUT2, preferably use the n channel type MOS transistor as the MOS varactor at MOS varactor as Fig. 3 B.This is because following cause: MOS varactor such utilization shown in Fig. 4 B of using the n channel type MOS transistor to form moved by dotted line 402 area surrounded.Therefore, the voltage that is applied to first electrode is high more, and the capacitance of variable capacitance 203 is big more, and impedance is more little.Because impedance can handle with the resistance of DC circuit in form equally, thus the amplitude of the alternating current of more little second electrode that can suppress to be supplied to variable capacitance 203 more of impedance.Therefore, can further be suppressed at first electrode and the middle insulation damages that causes owing to electric current that produces of the semiconductor element between the output OUT1 (being diode 205 in the case) that is connected to variable capacitance 203 efficiently.Likewise, can further be suppressed at first electrode and the middle insulation damages that causes owing to electric current that produces of the semiconductor element between the output OUT2 (being diode 204 in the case) that is connected to variable capacitance 203 efficiently.
In addition, in Fig. 3 B, though use the n channel type MOS transistor to form diode 204 and diode 205, the present invention is not limited to this structure.Also can use the p channel type MOS transistor to form diode 204 and diode 205.But in the case, the drain region of MOS transistor (D) is equivalent to first electrode (anode) of diode 204,205, and source region (S) and gate electrode (G) are equivalent to second electrode (negative electrode) of diode 204,205.
In addition, as the transistor that the transistor of MOS varactor or diode both can be to use Semiconductor substrate to form, the transistor that can be to use the SOI substrate to form again.Perhaps, also can be to use and be formed on the transistor that the thin semiconductor film on substrate with insulating surface such as glass substrate, quartz substrate, the plastic etc. forms.
The integral body that comprises variable capacitance of rectification circuit of the present invention can form through the technology of common MOS.In conventional amplitude limiter, use Zener diode sometimes as semiconductor element as switch.Zener diode is not easy to adopt the technology of common MOS (metal-oxide semiconductor (MOS)) to form.But the integral body that comprises variable capacitance of rectification circuit of the present invention can form through the technology of common MOS.In the case, can make rectification circuit, even use the semiconductor device miniaturization of this rectification circuit.
Embodiment 1
In the present embodiment, use Fig. 5 explanation can make the height of output voltage become the structure of 3 times rectification circuit of the present invention.
In Fig. 5, rectification circuit 501 is connected to terminal A1, the terminal A2 that antenna 502 is had, and the terminal A1 that had of antenna 502, terminal A2 are as the input of rectification circuit 501.Notice that though Fig. 5 shows the situation that antenna 502 has coiled type, the shape that is used for the antenna of present embodiment is not limited to this.Utilize not utilizing magnetic field under the situation that electric field communicates, antenna 502 needn't have coiled type.
Rectification circuit 501 has variable capacitance 503; Be used for making the diode 504, diode 505 and the diode 507 that are applied to the ac voltage rectifier between terminal A1 and the terminal A2; And voltage level and smooth smoothing capacity 506 and the smoothing capacity 508 that has been used for making the rectification change.Variable capacitance 503 has at least two electrodes.According to the magnitude of voltage that is applied between this first electrode and second electrode, the capacitance variation of variable capacitance 503.In the present embodiment, use varicap as variable capacitance 503.
Smoothing capacity 506 and smoothing capacity 508 are connected in series between the output OUT1 and output OUT2 that rectification circuit 501 had.Note, though in rectification circuit shown in Figure 5 501, with smoothing capacity 506 and smoothing capacity 508 be used for level and smooth rectification change voltage, also can not must have these electric capacity.Yet, can be through using smoothing capacity 506 and smoothing capacity 508, reduce composition such as rectification change beyond the direct current the ripple that voltage had etc.
In rectification circuit shown in Figure 5 501, terminal A1 is connected to first electrode (anode) that first electrode that variable capacitance 503 had and diode 507 are had.In addition, second electrode that had of variable capacitance 503 is connected to first electrode (anode) that second electrode (negative electrode) that diode 504 had and diode 505 are had.Second electrode (negative electrode) that first electrode (anode) that diode 504 is had and diode 507 are had is connected to first electrode that second electrode that smoothing capacity 506 had and smoothing capacity 508 are had.First electrode that second electrode (negative electrode) that diode 505 is had and smoothing capacity 506 are had is connected to output OUT1.Second electrode that smoothing capacity 508 is had is connected to terminal A2 and output OUT2.
In Fig. 5, when terminal A2 was connected to ground connection (GND), second electrode that smoothing capacity 508 is had was connected to GND.
When antenna 502 is exposed to the electric wave with specific range of wavelengths, in antenna 502, produce AC electromotive force, alternating voltage is applied between terminal A1 and the terminal A2.If being applied to the amplitude of the alternating voltage between terminal A1 and the terminal A2 is Vh, then output OUT1 is supplied the voltage of 3 times the height that is equivalent to Vh.
Can change the input impedance of rectification circuit 501 according to the capacitance of variable capacitance 503.Variable capacitance 503 can change its capacitance according to the magnitude of voltage that is applied to first electrode.Under the situation that adopts rectification circuit 501 shown in Figure 5, when the voltage in preset range is applied to first electrode that variable capacitance 503 had, the impedance phase coupling between rectification circuit 501 and antenna 502.And the alternating voltage that is applied to first electrode is applied to the semiconductor element of the back level of variable capacitance 503.Particularly, be applied to second electrode of diode 504 and first electrode of diode 505.
On the other hand, in rectification circuit shown in Figure 5 501, if first electrode that variable capacitance 503 is had applies the large amplitude voltage above preset range, then the capacitance of variable capacitance 503 reduces.The capacitance of variable capacitance 503 is more little, and the input impedance of rectification circuit 501 is big more, thereby can between rectification circuit 501 and antenna 502, impedance not matched.Its result, the alternating voltage that is applied to first electrode suppresses its amplitude because of reflection, and is applied to the semiconductor element of the back level of variable capacitance 503.Particularly, be applied to second electrode of diode 504 and first electrode of diode 505.
Like this, the rectification circuit of present embodiment can utilize and reflect the amplitude that suppresses alternating voltage.The deterioration or the damage of the semiconductor element of diode 504,505 in the rectification circuit 501 that therefore, can suppress to cause and smoothing capacity 506 etc. owing to overcurrent.In addition, also can amplitude limiter be set not as conventional such prime at rectification circuit, so can avoid following situation: because parasitic capacitance or a stray inductance and ground connection (GND) side short circuit that amplitude limiter had, thereby consumes electric power.
Notice that the kind and the number that are used for the semiconductor element of rectification circuit 501 are not limited to the structure shown in the present embodiment.Except semiconductor element shown in Figure 5, can also suitably add resistance, electric capacity, diode, inductor, switch etc., so that obtain further near desirable rectification characteristic.
Embodiment 2
In the present embodiment, use Fig. 6 explanation can make the height of output voltage become the structure of 3 times rectification circuit of the present invention.
In Fig. 6, rectification circuit 601 is connected to terminal A1, the terminal A2 that antenna 602 is had, and the terminal A1 that had of antenna 602, terminal A2 are as the input of rectification circuit 601.Notice that though Fig. 6 shows the situation that antenna 602 has coiled type, the shape that is used for the antenna of present embodiment is not limited to this.Utilize not utilizing magnetic field under the situation that electric field communicates, antenna 602 needn't have coiled type.
Rectification circuit 601 has variable capacitance 603; Be used for making the diode 604, diode 605 and the diode 607 that are applied to the ac voltage rectifier between terminal A1 and the terminal A2; And voltage level and smooth smoothing capacity 606 and the smoothing capacity 608 that has been used for making the rectification change.Variable capacitance 603 has at least two electrodes.According to the magnitude of voltage that is applied between this first electrode and second electrode, the capacitance variation of variable capacitance 603.In the present embodiment, use varicap as variable capacitance 603.
Smoothing capacity 606 and smoothing capacity 608 are connected in series between the output OUT1 and output OUT2 that rectification circuit 601 had.Note, though in rectification circuit shown in Figure 6 601, with smoothing capacity 606 and smoothing capacity 608 be used for level and smooth rectification change voltage, also can not must have these electric capacity.Yet, can be through using smoothing capacity 606 and smoothing capacity 608, reduce composition such as rectification change beyond the direct current the ripple that voltage had etc.
In rectification circuit shown in Figure 6 601, terminal A1 is connected to second electrode (negative electrode) that first electrode that variable capacitance 603 had and diode 607 are had.In addition, second electrode that had of variable capacitance 603 is connected to first electrode (anode) that second electrode (negative electrode) that diode 604 had and diode 605 are had.First electrode (anode) that diode 604 is had and terminal A2 are connected to first electrode that second electrode that smoothing capacity 606 had and smoothing capacity 608 are had.Second electrode that first electrode (anode) that diode 607 is had and smoothing capacity 608 are had is connected to output OUT2.First electrode that second electrode (negative electrode) that diode 605 is had and smoothing capacity 606 are had is connected to output OUT1.
In Fig. 6, when terminal A2 was connected to ground connection (GND), first electrode that first electrode (anode) that diode 604 is had, second electrode that smoothing capacity 606 is had and smoothing capacity 608 are had was connected to GND.
When antenna 602 is exposed to the electric wave with specific range of wavelengths, in antenna 602, produce AC electromotive force, alternating voltage is applied between terminal A1 and the terminal A2.If being applied to the amplitude of the alternating voltage between terminal A1 and the terminal A2 is Vh, then output OUT1 is supplied the voltage of 3 times the height that is equivalent to Vh.
Can change the input impedance of rectification circuit 601 according to the capacitance of variable capacitance 603.Variable capacitance 603 can change its capacitance according to the magnitude of voltage that is applied to first electrode.Under the situation that adopts rectification circuit 601 shown in Figure 6, when the voltage in preset range is applied to first electrode that variable capacitance 603 had, the impedance phase coupling between rectification circuit 601 and antenna 602.And the alternating voltage that is applied to first electrode is applied to the semiconductor element of the back level of variable capacitance 603.Particularly, be applied to second electrode of diode 604 and first electrode of diode 605.
On the other hand, in rectification circuit shown in Figure 6 601, if first electrode that variable capacitance 603 is had applies the large amplitude voltage above preset range, then the capacitance of variable capacitance 603 reduces.The capacitance of variable capacitance 603 is more little, and the input impedance of rectification circuit 601 is big more, thereby can between rectification circuit 601 and antenna 602, impedance not matched.Its result, the alternating voltage that is applied to first electrode suppresses its amplitude because of reflection, and is applied to the semiconductor element of the back level of variable capacitance 603.Particularly, be applied to second electrode of diode 604 and first electrode of diode 605.
Like this, the rectification circuit of present embodiment can utilize and reflect the amplitude that suppresses alternating voltage.The deterioration or the damage of the semiconductor element of diode 604,605 in the rectification circuit 601 that therefore, can suppress to cause and smoothing capacity 606 etc. owing to overcurrent.In addition, also can amplitude limiter be set not as conventional such prime at rectification circuit, so can avoid following situation: because parasitic capacitance or a stray inductance and ground connection (GND) side short circuit that amplitude limiter had, thereby consumes electric power.
Notice that the kind and the number that are used for the semiconductor element of rectification circuit 601 are not limited to the structure shown in the present embodiment.Except semiconductor element shown in Figure 6, can also suitably add resistance, electric capacity, diode, inductor, switch etc., so that obtain further near desirable rectification characteristic.
Embodiment 3
In the present embodiment, use Fig. 7 explanation can make the height of output voltage become the structure of 4 times rectification circuit of the present invention.
In Fig. 7, rectification circuit 701 is connected to terminal A1, the terminal A2 that antenna 702 is had, and the terminal A1 that had of antenna 702, terminal A2 are as the input of rectification circuit 701.Notice that though Fig. 7 shows the situation that antenna 702 has coiled type, the shape that is used for the antenna of present embodiment is not limited to this.Utilize not utilizing magnetic field under the situation that electric field communicates, antenna 702 needn't have coiled type.
Rectification circuit 701 has variable capacitance 703 and variable capacitance 709; Be used for making the diode 704, diode 705, diode 707 and the diode 710 that are applied to the ac voltage rectifier between terminal A1 and the terminal A2; And voltage level and smooth smoothing capacity 706 and the smoothing capacity 708 that has been used for making the rectification change.Variable capacitance 703 and variable capacitance 709 have at least two electrodes respectively.According to the magnitude of voltage that is applied between this first electrode and second electrode, the capacitance variation of variable capacitance 703 and variable capacitance 709.In the present embodiment, use varicap as variable capacitance 703 and variable capacitance 709.
Smoothing capacity 706 and smoothing capacity 708 are connected in series between the output OUT1 and output OUT2 that rectification circuit 701 had.Note, though in rectification circuit shown in Figure 7 701, with smoothing capacity 706 and smoothing capacity 708 be used for level and smooth rectification change voltage, also can not must have these electric capacity.Yet, can be through using smoothing capacity 706 and smoothing capacity 708, reduce composition such as rectification change beyond the direct current the ripple that voltage had etc.
In rectification circuit shown in Figure 7 701, terminal A1 is connected to first electrode that variable capacitance 703 is had.In addition, second electrode that had of variable capacitance 703 is connected to second electrode (negative electrode) that first electrode that variable capacitance 709 had, first electrode (anode) that diode 710 is had and diode 707 are had.Second electrode that variable capacitance 709 is had is connected to first electrode (anode) that second electrode (negative electrode) that diode 704 had and diode 705 are had.Second electrode that first electrode (anode) that diode 707 is had and smoothing capacity 708 are had is connected to terminal A2 and output OUT2.Second electrode (negative electrode) that first electrode (anode) that diode 704 is had and diode 710 are had is connected to first electrode that second electrode that smoothing capacity 706 had and smoothing capacity 708 are had.First electrode that second electrode (negative electrode) that diode 705 is had and smoothing capacity 706 are had is connected to output OUT1.
In Fig. 7, when terminal A2 was connected to ground connection (GND), second electrode that first electrode (anode) that diode 707 is had and smoothing capacity 708 are had was connected to GND.
When antenna 702 is exposed to the electric wave with specific range of wavelengths, in antenna 702, produce AC electromotive force, alternating voltage is applied between terminal A1 and the terminal A2.If being applied to the amplitude of the alternating voltage between terminal A1 and the terminal A2 is Vh, then output OUT1 is supplied the voltage of 4 times the height that is equivalent to Vh.
Can change the input impedance of rectification circuit 701 according to the capacitance of the capacitance of variable capacitance 703 and variable capacitance 709.Variable capacitance 703 can change its capacitance according to the magnitude of voltage that is applied to first electrode with variable capacitance 709.Under the situation that adopts rectification circuit 701 shown in Figure 7, when the voltage in preset range is applied to first electrode that variable capacitance 703 had, the impedance phase coupling between rectification circuit 701 and antenna 702.And the alternating voltage that is applied to first electrode is applied to the semiconductor element of the back level of variable capacitance 703.Particularly, be applied to first electrode of variable capacitance 709, first electrode of diode 710 and second electrode of diode 707.
On the other hand, if first electrode that variable capacitance 703 is had applies the large amplitude voltage above preset range, then the capacitance of variable capacitance 703 reduces.The capacitance of variable capacitance 703 is more little, and the input impedance of rectification circuit 701 is big more, thereby can between rectification circuit 701 and antenna 702, impedance not matched.Its result, the alternating voltage that is applied to first electrode suppresses its amplitude because of reflection, and is applied to the semiconductor element of the back level of variable capacitance 703.Particularly, be applied to first electrode of variable capacitance 709, first electrode of diode 710 and second electrode of diode 707.
And also maybe imaginary following situation: it is big that the amplitude of alternating voltage of second electrode of first electrode and diode 707 that is applied to first electrode, the diode 710 of variable capacitance 709 still surpasses the preset range that kind.In the present embodiment, the capacitance that also passes through variable capacitance 709 in the case reduces, and impedance is not matched.Its result, the alternating voltage that is applied to first electrode of variable capacitance 709 suppresses its amplitude because of reflection, and is applied to the semiconductor element of the back level of variable capacitance 709.Particularly, be applied to first electrode of diode 705 and second electrode of diode 704.
Like this, the rectification circuit 701 of present embodiment can utilize and reflect the amplitude that suppresses alternating voltage.The deterioration or the damage of the semiconductor element of diode 704,705,707,710 in the rectification circuit 701 that therefore, can suppress to cause and smoothing capacity 706,708 etc. owing to overcurrent.In addition, also can amplitude limiter be set not as conventional such prime at rectification circuit, so can avoid following situation: because parasitic capacitance or a stray inductance and ground connection (GND) side short circuit that amplitude limiter had, thereby consumes electric power.
Note,, but also can use electric capacity and replace any in variable capacitance 703 and the variable capacitance 709 with constant capacitance in the present embodiment although the clear structure of using the rectification circuit of two variable capacitances.But, can further improve the reliability of rectification circuit 701 through using variable capacitance 703 and variable capacitance 709.
In addition, the kind and the number that are used for the semiconductor element of rectification circuit 701 are not limited to the structure shown in the present embodiment.Except semiconductor element shown in Figure 7, can also suitably add resistance, electric capacity, diode, inductor, switch etc., so that obtain further near desirable rectification characteristic.
Embodiment 4
In the present embodiment, use Fig. 8 explanation can make the height of output voltage become the structure of 4 times rectification circuit of the present invention.
In Fig. 8, rectification circuit 801 is connected to terminal A1, the terminal A2 that antenna 802 is had, and the terminal A1 that had of antenna 802, terminal A2 are as the input of rectification circuit 801.Notice that though Fig. 8 shows the situation that antenna 802 has coiled type, the shape that is used for the antenna of present embodiment is not limited to this.Utilize not utilizing magnetic field under the situation that electric field communicates, antenna 802 needn't have coiled type.
Rectification circuit 801 has variable capacitance 803 and variable capacitance 809; Be used for making the diode 804, diode 805, diode 807 and the diode 810 that are applied to the ac voltage rectifier between terminal A1 and the terminal A2; And voltage level and smooth smoothing capacity 806 and the smoothing capacity 808 that has been used for making the rectification change.Variable capacitance 803 has at least two electrodes respectively with variable capacitance 809.According to the magnitude of voltage that is applied between this first electrode and second electrode, the capacitance variation of variable capacitance 803 and variable capacitance 809.In the present embodiment, use varicap as variable capacitance 803 and variable capacitance 809.
Smoothing capacity 806 and smoothing capacity 808 are connected in series between the output OUT1 and output OUT2 that rectification circuit 801 had.Note, though in rectification circuit shown in Figure 8 801, with smoothing capacity 806 and smoothing capacity 808 be used for level and smooth rectification change voltage, also can not must have these electric capacity.Yet, can be through using smoothing capacity 806 and smoothing capacity 808, reduce composition such as rectification change beyond the direct current the ripple that voltage had etc.
In rectification circuit shown in Figure 8 801, terminal A1 is connected to first electrode that first electrode that variable capacitance 803 had and variable capacitance 809 are had.In addition, second electrode that had of variable capacitance 809 is connected to second electrode (negative electrode) that first electrode (anode) that diode 810 had and diode 807 are had.Second electrode that variable capacitance 803 is had is connected to first electrode (anode) that second electrode (negative electrode) that diode 804 had and diode 805 are had.Second electrode that first electrode (anode) that diode 807 is had and smoothing capacity 808 are had is connected to output OUT2.Second electrode (negative electrode) that first electrode (anode) that diode 804 is had and diode 810 are had is connected to first electrode that second electrode that terminal A2, smoothing capacity 806 had and smoothing capacity 808 are had.First electrode that second electrode (negative electrode) that diode 805 is had and smoothing capacity 806 are had is connected to output OUT1.
In Fig. 8, when terminal A2 was connected to ground connection (GND), second electrode of first electrode of diode 804, second electrode of diode 810, smoothing capacity 806 and first electrode of smoothing capacity 808 were connected to GND.
When antenna 802 is exposed to the electric wave with specific range of wavelengths, in antenna 802, produce AC electromotive force, alternating voltage is applied between terminal A1 and the terminal A2.If being applied to the amplitude of the alternating voltage between terminal A1 and the terminal A2 is Vh, then output OUT1 is supplied the voltage of 4 times the height that is equivalent to Vh.
Can change the input impedance of rectification circuit 801 according to the capacitance of the capacitance of variable capacitance 803 and variable capacitance 809.Variable capacitance 803 can change its capacitance according to the magnitude of voltage that is applied to first electrode with variable capacitance 809.Under the situation that adopts rectification circuit 801 shown in Figure 8, when the voltage in preset range is applied to first electrode that variable capacitance 803 and variable capacitance 809 have respectively, the impedance phase coupling between rectification circuit 801 and antenna 802.And the alternating voltage that is applied to first electrode is applied to the semiconductor element of the back level of variable capacitance 803 and variable capacitance 809.Particularly, be applied to first electrode of diode 810, second electrode of diode 807, second electrode of diode 804 and first electrode of diode 805.
On the other hand, if first electrode that variable capacitance 803 and variable capacitance 809 are had respectively applies the large amplitude voltage above preset range, then the capacitance of variable capacitance 803 and variable capacitance 809 reduces respectively.The capacitance of variable capacitance 803 and variable capacitance 809 is more little, and the input impedance of rectification circuit 801 is big more, thereby can between rectification circuit 801 and antenna 802, impedance not matched.Its result, the alternating voltage that is applied to first electrode suppresses its amplitude because of reflection, and is applied to the semiconductor element of the back level of variable capacitance 803 and variable capacitance 809.Particularly, be applied to first electrode of diode 810, second electrode of diode 807, second electrode of diode 804 and first electrode of diode 805.
Like this, the rectification circuit 801 of present embodiment can utilize and reflect the amplitude that suppresses alternating voltage.The deterioration or the damage of the semiconductor element of diode 804,805,807,810 in the rectification circuit 801 that therefore, can suppress to cause and smoothing capacity 806,808 etc. owing to overcurrent.In addition, also can amplitude limiter be set not as conventional such prime at rectification circuit, so can avoid following situation: because parasitic capacitance or a stray inductance and ground connection (GND) side short circuit that amplitude limiter had, thereby consumes electric power.
Note,, but also can use electric capacity and replace any in variable capacitance 803 and the variable capacitance 809 with constant capacitance in the present embodiment although the clear structure of using the rectification circuit of two variable capacitances.But, can further improve the reliability of rectification circuit 801 through using variable capacitance 803 and variable capacitance 809.
In addition, the kind and the number that are used for the semiconductor element of rectification circuit 801 are not limited to the structure shown in the present embodiment.Except semiconductor element shown in Figure 8, can also suitably add resistance, electric capacity, diode, inductor, switch etc., so that obtain further near desirable rectification characteristic.
Embodiment 5
Use Fig. 9 that the structure of semiconductor device of the present invention is described.Fig. 9 is the block diagram that a mode of semiconductor device of the present invention is shown.In Fig. 9, semiconductor device 900 has antenna 901 and integrated circuit 902.Integrated circuit 902 has rectification circuit 903, demodulator circuit 904, modulation circuit 905, adjuster 906, signal generating circuit 907, encoder 908 and memory 909.
When from reader transmission electric wave, convert this electric wave into alternating voltage at antenna 901.In rectification circuit 903, make ac voltage rectifier, and produce the voltage that power supply is used from antenna 901.In rectification circuit 903 of the present invention,, also can suppress deterioration or the damage of the semiconductor element in the rectification circuit 903 and produce the voltage that power supply is used even the alternating voltage that produces at antenna 901 has above the such big amplitude of preset range.
The voltage that the power supply that in rectification circuit 903, is produced is used is supplied to signal generating circuit 907 and adjuster 906.Adjuster 906 is supplied to the various circuit such as demodulator circuit 904, modulation circuit 905, signal generating circuit 907, encoder 908 or memory 909 in the integrated circuit 902 with this voltage after the voltage that the power supply that makes self-rectifying circuit 903 is used is stablized or adjusted its height.
Demodulator circuit 904 demodulation produce signal from the alternating voltage of antenna 901, and output to the signal generating circuit 907 of back level.Signal generating circuit 907 carries out calculation process according to the signal from demodulator circuit 904 inputs, and produces signal separately.When carrying out above-mentioned calculation process, can be with memory 909 as cache memory or secondary cache memory.The signal that in signal generating circuit 907, produces outputs to modulation circuit 905 then by encoder 908 codings.Modulation circuit 905 is modulated the electric wave that produces at antenna 901 according to this signal.When in antenna 901, producing this electric wave that has carried out modulation, reader can receive the signal from signal generating circuit 907 through receiving this electric wave.
Like this, the communication between semiconductor device 900 and reader can be carried out through the electric wave of modulation as carrier wave (carrier).As carrier wave, can use the electric wave of various frequencies such as 125KHz, 13.56MHz, 950MHz.Mode as modulation also has variety of ways such as Modulation and Amplitude Modulation, frequency modulation(FM), phase modulated, but does not have special qualification.
The load mode of signal can be divided into various kinds such as electromagnetic coupled mode, way of electromagnetic induction, microwave mode according to the wavelength of carrier wave.Under the situation that adopts electromagnetic coupled mode or way of electromagnetic induction, because semiconductor device is exposed to powerful electric wave, so might in antenna, produce excessive alternating voltage.If use rectification circuit of the present invention, the deterioration or the damage of the semiconductor element in the integrated circuit that can prevent to cause owing to excessive alternating voltage, thereby effective especially when adopting electromagnetic coupled mode or way of electromagnetic induction.
Memory 909 can be nonvolatile memory or volatile memory.As memory 909, for example can use SRAM, DRAM, flash memory, EEPROM, FeRAM etc.
In the present embodiment, although clear structure with semiconductor device 900 of antenna 901, but semiconductor device of the present invention also can not must have antenna.In addition, also oscillating circuit or secondary cell can be set in semiconductor device shown in Figure 9.
In addition, in Fig. 9, although the clear structure that only has the semiconductor device of an antenna, but the present invention is not limited to this structure.Also can have following two antennas, promptly be used for the antenna that receives the antenna of electric power and be used for receiving signal.When having an antenna, for example, when the electric wave with 950MHz carry out electric power supply and signal transmission the two the time, big electric power is sent to place far away, thereby might hinder the reception action of other wireless devices.Therefore, the frequency that preferably reduces electric wave is with near-distance supply electric power, but communication distance must shorten in the case.But, when having two antennas, can use the frequency of the electric wave of supplying electric power and the frequency of the electric wave that sends signal respectively.For example, when sending electric power, can be 13.56MHz with the frequency of electric wave and utilize magnetic field, and the frequency with electric wave be 950MHz and utilizes electric field when the transmission signal.Like this, if use antenna respectively, then when supply electric power, only carry out in-plant communication, and when sending signal, also can communicate by letter at a distance according to function.
Present embodiment can suitably make up with execution mode 1 to 3, embodiment 1 to 4 and implement.
Embodiment 6
The outward appearance of semiconductor device of the present invention then, is described.
Figure 10 A uses perspective view that a mode of the semiconductor device of the present invention that forms shaped like chips is shown.Reference numeral 1601 is equivalent to integrated circuit, and 1602 are equivalent to antenna.Antenna 1602 is connected to integrated circuit 1601.Reference numeral 1603 is equivalent to substrate, and 1604 are equivalent to cladding material.Rectification circuit of the present invention is included in the integrated circuit 1601.Integrated circuit 1601 is formed on the substrate 1603, and cladding material 1604 to cover integrated circuits 1601 and antenna 1602 ground and substrate 1603 overlapping.Notice, both can antenna 1602 be formed on the substrate 1603 that the antenna 1602 that can after forming integrated circuit 1601, will form separately again is fitted on the substrate 1603.
Figure 10 B uses perspective view that a mode of the semiconductor device of the present invention that forms the card shape is shown.Reference numeral 1605 is equivalent to integrated circuit, and 1606 be equivalent to antenna, and antenna 1606 is connected to integrated circuit 1605.Reference numeral 1608 is equivalent to as the substrate that inserts sheet (inlet sheet), and 1607 and 1609 are equivalent to cladding material.Integrated circuit 1605 and antenna 1606 are formed on the substrate 1608, and substrate 1608 is clipped between two cladding materials 1607 and 1609.
Notice that though antenna 1602 has been shown in Figure 10 A and 10B and antenna 1606 has the situation of coiled type, the shape that is used for antenna of the present invention is not limited to this.Utilize not utilizing magnetic field under the situation that electric field communicates, antenna 1602 and antenna 1606 needn't have coiled type.
The integral body that comprises variable capacitance of rectification circuit of the present invention can form through the technology of common MOS.Therefore, can make rectification circuit, even use the semiconductor device miniaturization of this rectification circuit.
Embodiment 7
Then, specify the manufacturing approach of semiconductor device of the present invention.Notice that though show in the present embodiment with the example of thin-film transistor (TFT) as semiconductor element, the semiconductor element that is used for semiconductor device of the present invention is not limited to this.For example, except TFT, can also use memory element, diode, resistance, coil, electric capacity, inductor etc.
At first, shown in Figure 12 A, have dielectric film 303 and the semiconductor film 304 that forms dielectric film 301, peel ply 302 on the stable on heating substrate 300 in order, is used as basilar memebrane.Dielectric film 301, peel ply 302, dielectric film 303 and semiconductor film 304 can form continuously.
As substrate 300, for example can use glass substrate such as barium borosilicate glass or alumina-borosilicate glass etc., quartz substrate, ceramic substrate etc.In addition, also can use the metal substrate that comprises at the bottom of the stainless steel lining or like Semiconductor substrate such as silicon substrates.Though the heat resisting temperature by having the substrate that flexible synthetic resin such as plastics etc. constitute is usually less than above-mentioned substrate, as long as can tolerate the treatment temperature in the manufacturing process, just can use.
As plastic, can enumerate with PET (PET) be representative polyester, polyether sulfone (PES), gather naphthalene diacid second diester (PEN), Merlon (PC), nylon, polyether-ether-ketone (PEEK), polysulfones (PSF), PEI (PEI), polyacrylate (PAR), polybutylene terephthalate (PBT), polyimides, acrylonitrile-butadiene-styrene resin, polyvinyl chloride, polypropylene, polyvinyl acetate, acrylic resin etc.
Notice that though on the whole surface of substrate 300, peel ply 302 is set in the present embodiment, the present invention is not limited to this structure.For example, also can use photoetching process etc. to form peel ply 302 on substrate 300 tops.
Dielectric film 301 passes through to use CVD method or sputtering method etc. and uses silica, silicon nitride (SiN with dielectric film 303 x, Si 3N 4Deng), silicon oxynitride (SiO xN y) (x＞y＞0), silicon oxynitride (SiN xO y) material with insulating properties of (x＞y＞0) etc. forms.
Dielectric film 301 and dielectric film 303 are set, are diffused in the semiconductor film 304 and property of semiconductor element such as TFT are brought bad influence so that prevent to be included in alkali metal or the alkaline-earth metal of Na in the substrate 300 etc.In addition, dielectric film 303 also has following effect: the impurity element that prevents to be included in the peel ply 302 is diffused in the semiconductor film 304, and after the operation of stripping semiconductor element in protect semiconductor element.
Dielectric film 301, dielectric film 303 can be to use single dielectric film to form, and also can form by range upon range of a plurality of dielectric films.In the present embodiment, the thick oxygen silicon nitride membrane of silicon oxynitride film, 100nm that oxygen silicon nitride membrane, the 50nm that range upon range of in order 100nm is thick is thick forms dielectric film 303, but the material of each film, film thickness, range upon range of number are not limited to this.The oxygen silicon nitride membrane that for example, also can replace lower floor through thick siloxane resins of formation 0.5 μ m to 3 μ m such as whirl coating, slit type coater method, liquid droplet ejection method, print processes.In addition, also can use silicon nitride film (SiN x, Si 3N 4Deng) and the silicon oxynitride film in replacement middle level.In addition, also can use silicon oxide film and replace the oxygen silicon nitride membrane on upper strata.In addition, their film thickness is preferably 0.05 μ m to 3 μ m respectively, in this scope, can select arbitrarily.
Perhaps, also can use the lower floor of formation of oxygen silicon nitride membrane or silicon oxide film and peel ply 302 immediate dielectric films 303, use siloxane resin to form the middle level, and use silicon oxide film formation upper strata.
Notice that siloxane resin is equivalent to the resin that comprises the Si-O-Si key that forms as parent material with the type siloxane material.Siloxane resin can also have at least a as substituting group in fluorine, alkyl or the aromatic hydrocarbons except hydrogen.
Silicon oxide film can use SiH 4/ O 2, TEOS (tetraethoxysilane)/O 2Form Deng mist and through methods such as hot CVD, plasma CVD, atmospheric pressure cvd, bias voltage (bias) ECRCVD.In addition, silicon nitride film can the typical case use SiH 4/ NH 3Mist and form through plasma CVD.In addition, oxygen silicon nitride membrane and silicon oxynitride film can the typical case use SiH 4/ N 2The mist of O and form through plasma CVD.
Peel ply 302 can use metal film, metal oxide film and laminated metal film and metal oxide film and the film that forms.Metal film and metal oxide film can be individual layers, also can have the range upon range of laminated construction that has a plurality of layers.In addition, except metal film or the metal oxide film, can also use metal nitride or metal oxynitrides.Peel ply 302 can wait through the various CVD methods of sputtering method or plasma CVD method etc. and form.
As the metal that is used for peel ply 302, can enumerate tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os) or iridium (Ir) etc.Peel ply 302 except the film that forms by above-mentioned metal, the film that can also use by the film that forms as the alloy of main component with above-mentioned metal or use the compound that comprises above-mentioned metal to form.
In addition, peel ply 302 both can use the film that is formed by silicon (Si) monomer, can use the film that forms as the compound of main component by with silicon (Si) again.Perhaps, also can use by silicon (Si) and comprise the film that the alloy of above-mentioned metal forms.The film that comprises silicon can have any structure in amorphous, crystallite, the polycrystalline structure.
Peel ply 302 can use the above-mentioned film of individual layer, also can use the lamination of above-mentioned a plurality of films.The peel ply 302 of range upon range of metal film and metal oxide film can form the surface oxidation of this metal film or nitrogenize through become basic metal film in formation after.Particularly, in oxygen atmosphere or N 2Carry out Cement Composite Treated by Plasma to becoming basic metal film in the O atmosphere, or in oxygen atmosphere or N 2In the O atmosphere metal film being carried out heat treated gets final product.In addition, also can be through forming silicon oxide film contiguously on the basic metal film or oxygen silicon nitride membrane carries out oxidation becoming.In addition, can be through forming silicon oxynitride film contiguously on the basic metal film or silicon nitride film carries out nitrogenize becoming.
As the Cement Composite Treated by Plasma of the oxidation of carrying out metal film or nitrogenize, can carry out following Cement Composite Treated by Plasma, promptly plasma density is 1 * 10 11Cm -3More than, be preferably 1 * 10 11Cm -3To 9 * 10 15Cm -3Below, and use the high frequency waves of microwave (for example, frequency is 2.45GHz) etc.
Note, can form the range upon range of peel ply 302 that metal film and metal oxide film are arranged, but also can after forming metal film, form metal oxide film separately through making the surface oxidation that becomes basic metal film.
For example, using under the situation of tungsten as metal, after becoming basic metal film, this tungsten film is being carried out Cement Composite Treated by Plasma through the conduct of formation tungsten films such as sputtering method or CVD method.Through this operation, the metal oxide film that can form the tungsten film that is equivalent to metal film and contact with this metal film and form by the oxide of tungsten.
In addition, the oxide of tungsten is by WO xExpression.X is in the scope below 3 more than 2, and it is 2 (WO that following situation: x is arranged 2), x is 2.5 (W 2O 5), x is 2.75 (W 4O 11) and x be 3 (WO 3).When forming the oxide of tungsten, the x value is had no particular limits, set the x value and get final product and wait according to rate of etch.
Semiconductor film 304 preferably after forming dielectric film 303, forms with the mode that is not exposed to atmosphere.The thickness of semiconductor film 304 is 20nm to 200nm (being preferably 40nm to 170nm, more preferably 50nm to 150nm).Notice that semiconductor film 304 both can be the amorphous semiconductor, can be again poly semiconductor.In addition, as semiconductor, except silicon, can also use SiGe.Under the situation of using SiGe, the concentration of germanium is preferably about 0.01 atom % to 4.5 atom %.
In addition, semiconductor film 304 also can come crystallization through well-known technology.As well-known crystallization method, the laser crystallization method of utilizing laser, the crystallization method of using catalytic elements are arranged.Perhaps, also can adopt the crystallization method of catalytic elements and the method for laser crystallization method used that made up.In addition; Using quartz etc. to have under the superior situation of stable on heating substrate, also can adopt and freely make up the thermal crystallisation method of using electrothermal furnace, the lamp annealing crystallization method of utilizing infrared light or the crystallization method of using catalytic elements, about 950 ℃ the crystallization method of high annealing as substrate 300.
For example, under the situation that adopts the laser crystallization method, before making laser crystallization to semiconductor film 304 with 550 ℃ of heat treated of carrying out 4 hours, so that improve patience with respect to the semiconductor film 304 of laser.Afterwards, through using solid state laser that can continuous oscillation and shining the laser of the secondary of first-harmonic to four-time harmonic, can obtain the crystallization of big crystallite dimension.For example, typically, preferably use Nd:YVO 4Laser (first-harmonic: second harmonic 1064nm) (532nm) or triple-frequency harmonics (355nm).Particularly, by continuous oscillation type YVO 4It is the laser of 10W to obtain power output that the laser emitted laser converts harmonic wave into by nonlinear optical element.Preferably, form rectangle or oval-shaped laser through using optical system at irradiating surface, and it is shone semiconductive thin film 304.In this case, need 0.01MW/cm 2To 100MW/cm 2About (be preferably 0.1MW/cm 2To 10MW/cm 2) energy density.Sweep speed is set at about 10cm/sec to 2000cm/sec shines.
As the gas laser of continuous oscillation, can use Ar laser, Kr laser etc.In addition, as the solid state laser of continuous oscillation, can use YAG laser, YVO 4Laser, YLF Lasers device, YAlO 3Laser, forsterite (Mg 2SiO 4) laser, GdVO 4Laser, Y 2O 3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser etc.
In addition, as the laser of impulse hunting, for example can use Ar laser, Kr laser, excimer laser, CO 2Laser, YAG laser, Y 2O 3Laser, YVO 4Laser, YLF Lasers device, YAlO 3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper-vapor laser or golden vapor laser.
In addition, the frequency of oscillation of laser that also can be through making impulse hunting is more than the 10MHz and uses than normally used tens Hz to the obvious high frequency band of the frequency band of hundreds of Hz, carries out laser crystallization.It is generally acknowledged: from being that tens nsecs to hundreds of nsec to semiconductor film 304 back up to the 304 completely crued times of semiconductor film with laser radiation with the impulse hunting mode.Therefore, through using above-mentioned frequency band, semiconductor film 304 be molten to because of laser curing during, can shine the laser of next pulse.Therefore, owing to can in semiconductor film 304, move solid liquid interface continuously, has towards the scanning direction semiconductor film 304 of the crystal grain of growth continuously so form.Particularly, can be formed on width on the scanning direction of involved crystal grain is 10 μ m to 30 μ m and in the set that is the crystal grain about 1 μ m to 5 μ m perpendicular to the width on the direction of scanning direction.Can form the semiconductor film 304 that on the channel direction of TFT, has crystal boundary at least hardly through forming along said scanning direction the single grain of growth continuously.
In addition, both can the walk abreast laser of harmonic wave of laser and continuous oscillation of first-harmonic of irradiation continuous oscillation of laser crystallization, the laser of the laser of the first-harmonic that shines continuous oscillation of can walking abreast again and the harmonic wave of impulse hunting.
In addition, also can be in inert gas atmospheres such as rare gas or nitrogen irradiating laser.By this way, the roughness of the semiconductor surface that can suppress to cause owing to laser radiation, and can suppress the inhomogeneities of the threshold value that the inhomogeneities owing to interface state density produces.
Form the further crystalline semiconductor film 304 that improved through above-mentioned laser radiation.Note, also can use through preformed poly semiconductors such as sputtering method, plasma CVD method, hot CVD methods as semiconductor film 304.
In addition, though make semiconductor film 304 crystallization in the present embodiment, also can not make its crystallization and use amorphous silicon semiconductor film or microcrystalline semiconductor film to come directly to get into follow-up step.Because the manufacturing process of the TFT of use amorphous semiconductor or crystallite semiconductor is less than the manufacturing process of the TFT that uses poly semiconductor, so it has the advantage that can suppress cost and improve rate of finished products.
Can glow discharge decompose the gas that comprises silicon and obtain amorphous semiconductor.As the gas that comprises silicon, can enumerate SiH 4, Si 2H 6Also can use the above-mentioned gas that comprises silicon of hydrogen or hydrogen and HD to use.
Then, shown in Figure 12 B, semiconductor film 304 processing (composition) are become predetermined shape, to form island semiconductor film 305 to 307.And, cover island semiconductor film 305 to 307 ground and form gate insulating film 308.Gate insulating film 308 can form with the film that individual layer or range upon range of formation comprise silicon nitride, silica, silicon oxynitride or silicon oxynitride through using plasma CVD method or sputtering method etc.Under range upon range of their situation, for example, preferably have from the 3-tier architecture of the range upon range of silicon oxide film of substrate 300 1 sides, silicon nitride film, silicon oxide film.
Gate insulating film 308 also can form the surface oxidation or the nitrogenize of island semiconductor film 305 to 307 through carrying out the high-density plasma processing.The mist that high-density plasma is handled the rare gas for example use He, Ar, Kr, Xe etc. and oxygen, nitrogen oxide, ammonia, nitrogen, hydrogen etc. carries out.In the case, can carry out exciting of plasma through importing microwave, and produce low electron temperature and highdensity plasma.Through make the surface oxidation or the nitrogenize of semiconductor film by oxygen base of this highdensity plasma generation (situation that comprises the OH base is also arranged) or nitrogen base (situation that comprises the NH base is also arranged); Form 1nm to 20nm contiguously with semiconductor film, be typically the dielectric film of 5nm to 10nm thickness.The dielectric film of this 5nm to 10nm thickness is as gate insulating film 308.
The oxidation or the nitrogenize of the above-mentioned semiconductor film that utilizes the high-density plasma processing are carried out with solid phase reaction, thereby can make the interface state density between gate insulating film and the semiconductor film very low.Directly make semiconductor film oxidation or nitrogenize, the inhomogeneities of the thickness of the dielectric film that can suppress to be formed through utilizing high-density plasma to handle.In addition; Have under the crystalline situation at semiconductor film; Can handle the surface oxidation that makes semiconductor film with solid phase reaction through utilizing high-density plasma, suppress only to carry out oxidation fast, and form good uniformity and the low gate insulating film of interface state density at crystal grain boundary.Comprise the inhomogeneities that transistor that the dielectric film that utilizes high-density plasma to handle to form forms can suppression characteristic in the part of gate insulating film or whole.
Then, shown in Figure 12 C,, above island semiconductor film 305 to 307, form gate electrode 309 through after conducting film being formed on the gate insulating film 308, this conducting film processing (composition) being become predetermined shape.In the present embodiment, through being carried out composition, two range upon range of conducting films form gate electrode 309.Conducting film can use tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminium (Al), copper (Cu), chromium (Cr), niobium (Nb) etc.In addition, also can use, also can use the compound that comprises above-mentioned metal with the alloy of above-mentioned metal as main component.Perhaps, also can use the semiconductor film semiconductors such as polysilicon that the impurity element of giving conductivity such as phosphorus etc. forms that mixed are formed.
In the present embodiment, use nitrogenize tantalum film or tantalum (Ta) film, and use tungsten (W) film as second layer conducting film as the ground floor conducting film.As the combination of two conducting films, except the instance shown in the present embodiment, can also enumerate tungsten nitride film and tungsten film, molybdenum nitride film and molybdenum film, aluminium film and tantalum film and aluminium film and titanium film etc.Because tungsten or tantalum nitride have high-fire resistance, so can to carry out with the hot activation in the operation after forming two-layer conducting film be the heat treated of purpose.In addition, as the combination of two-layer conducting film, the Si and the WSi of the silicon of the impurity that for example can using has mixed gives the n type and NiSi (nickel silicide), the impurity of giving the n type of having mixed xDeng.
In addition, though form gate electrode 309 by two range upon range of conducting films in the present embodiment, present embodiment is not limited to this structure.Gate electrode 309 both can be formed by the conducting film of individual layer, can form through range upon range of conducting film more than three layers again.Under the situation of the three-decker that adopts range upon range of conducting film more than three layers, preferably adopt the laminated construction of molybdenum film, aluminium film and molybdenum film.
As the method that forms conducting film, can use CVD method, sputtering method etc.In the present embodiment, form the ground floor conducting film, and form second layer conducting film with the thickness of 100nm to 400nm with the thickness of 20nm to 100nm.
In addition, as the mask that when forming gate electrode 309, uses, also can use silica, silicon oxynitride etc. and the replacement resist.In the case, carry out the operation that composition forms the mask of silica, silicon oxynitride etc., because the minimizing of the film of mask when etching lacks than resist, so can form gate electrode 309 with required width though also be added with.In addition, also can optionally form gate electrode 309, and not use mask through using liquid droplet ejection method.
Notice that liquid droplet ejection method means from the pore ejection or spray the method that the drop that comprises the predetermined composition thing forms predetermined pattern that ink-jet method etc. are included in its category.
Then, gate electrode 309 is given the impurity element (being typically P (phosphorus) or As (arsenic)) (the first doping operation) of n type with low concentration doping to island semiconductor film 305 to 307 as mask.The condition enactment of the first doping operation is: dosage is 1 * 10 15/ cm 3To 1 * 10 19/ cm 3, accelerating voltage is 50keV to 70keV, but is not limited to this.By means of this first doping operation, mix through gate insulating film 308, in island semiconductor film 305 to 307, form a pair of low concentration impurity district 310 respectively.In addition, also can use mask to cover the island semiconductor film 305 that becomes p channel-type TFT and carry out the first doping operation.
Then, shown in Figure 13 A, cover island semiconductor film 306,307 ground that become n channel-type TFT and form mask 311.Not only use mask 311, also use gate electrode 309, island semiconductor film 305 is given the impurity element (being typically B (boron)) (the second doping operation) of p type with high-concentration dopant as mask.The condition of the second doping operation is: dosage is 1 * 10 19/ cm 3To 1 * 10 20/ cm 3, accelerating voltage is 20keV to 40keV.By means of this second doping operation, mix through gate insulating film 308, in island semiconductor film 305, form p type high concentration impurities district 312.
Then, shown in Figure 13 B, after through removal masks 311 such as ashing (ashing), cover gate dielectric film 308 and gate electrode 309 ground form dielectric film.This dielectric film is through plasma CVD method or sputtering method etc. and with individual layer or laminated construction, formed by silicon fiml, silicon oxide film, oxygen silicon nitride membrane or silicon oxynitride film or the film that contains organic materials such as organic resin.In the present embodiment, form the thick silicon oxide film of 100nm through plasma CVD method.
Afterwards, through being the anisotropic etching of main body with the vertical direction, partly etching grid dielectric film 308 and this dielectric film.Through above-mentioned anisotropic etching, gate insulating film 308 partly is etched, to form gate insulating film 313 on ground, island semiconductor film 305 to 307 tops.In addition, through above-mentioned anisotropic etching etching dielectric film partly, and form the sidewall 314 with the contacts side surfaces of gate electrode 309.Sidewall 314 is used mask as the doping when forming LDD (lightly doped drain) district.In the present embodiment, use CHF 3With the mist of He as etching gas.Notice that the operation that forms sidewall 314 is not limited to these.
Then, cover island semiconductor film 305 ground that become p channel-type TFT and form mask.Afterwards, not only use the mask that forms, also use gate electrode 309 and sidewall 314, give the impurity element (being typically P or As) (the 3rd doping operation) of n type with high-concentration dopant as mask.The condition of the 3rd doping operation is: dosage is 1 * 10 19/ cm 3To 1 * 10 20/ cm 3, accelerating voltage is 60keV to 100keV.By means of the 3rd doping operation, in island semiconductor film 306,307, form a pair of n type high concentration impurities district 315 respectively.
Note, sidewall 314 as when after doped with high concentration the impurity of giving the n type and in the formation low concentration impurity district, bottom of sidewall 314 or the mask during undoped deviate region.Therefore, in order to control the width of low concentration impurity district or deviate region, suitably change thickness that anisotropic etching conditioned disjunction when formation sidewall 314 is used to form the dielectric film of sidewall 314 and regulate the size of sidewall 314 and get final product.
Then, also can after through removal masks such as ashing, utilize the activation of the heat treated of impurity range.For example, after the oxygen silicon nitride membrane that forms 50nm, in nitrogen atmosphere, get final product with 550 ℃ of heat treated of carrying out 4 hours.
In addition, also can after the silicon nitride film that will comprise hydrogen forms 100nm thickness, carry out following operation, promptly in nitrogen atmosphere with 410 ℃ of heat treated of carrying out 1 hour, make island semiconductor film 305 to 307 hydrogenations.Perhaps, also can carry out in comprising the atmosphere of hydrogen making the operation of island semiconductor film 305 to 307 hydrogenations with 300 ℃ to 450 ℃ heat treated of carrying out 1 to 12 hour.As heat treated, can use thermal annealing, laser annealing method or RTA method etc.By means of heat treated, not only carry out hydrogenation, and can add the activation of the impurity element in the semiconductor film to.In addition, as the additive method of hydrogenation, also can carry out plasma hydrogenation (using hydrogen) by plasma exciatiaon.By means of this hydrogenation process, can use the hydrogen of thermal excitation to make the dangling bonds termination.
By means of above-mentioned a series of operation, form n channel-type TFT318,319 and p channel-type TFT317.
Then, shown in Figure 13 C, form dielectric film 320 as the passivating film of protection TFT317 to 319.Though do not need necessarily to be provided with dielectric film 320, can prevent that impurity such as alkali metal or alkaline-earth metal from entering into TFT317 to 319 through dielectric film 320.Particularly, as dielectric film 320, preferably use silicon nitride, silicon oxynitride, aluminium nitride, aluminium oxide, silica etc.In the present embodiment, the oxygen silicon nitride membrane about using 600nm thick is as dielectric film 320.In the case, also can after forming this oxygen silicon nitride membrane, carry out above-mentioned hydrogenation process.
Then, cover TFT317 to 319 ground and on dielectric film 320, form dielectric film 321.Dielectric film 321 can use have stable on heating organic material such as polyimides, acrylic acid, benzocyclobutene, polyamide, epoxy etc.In addition, except above-mentioned organic material, can also use advanced low-k materials (Low-k material), siloxane resin, silica, silicon nitride, silicon oxynitride, silicon oxynitride, PSG (phosphorosilicate glass), BPSG (boron-phosphorosilicate glass), aluminium oxide etc.Except hydrogen, siloxane resin also can have at least a as substituting group in fluorine, alkyl or the aromatic hydrocarbons.Note, also can pass through range upon range of a plurality of dielectric films that form by above-mentioned material, form dielectric film 321.
Dielectric film 321 can use CVD method, sputtering method, SOG method, whirl coating, infusion process, spraying process, liquid droplet ejection method (ink-jet method, silk screen printing, hectographic printing etc.), scraper, roller coat, curtain coating, scraper coating to wait and form according to its material.
Then, the part of island semiconductor film 305 to 307 forms contact hole with exposing respectively in dielectric film 320 and dielectric film 321.Afterwards, form conducting film 322 and the conducting film 323 to 326 that contacts with island semiconductor film 305 to 307 through this contact hole.Though use CHF 3Be used for the gas of the etching work procedure when forming contact hole with the mist conduct of He, but be not limited to this.
Conducting film 322 to 326 can wait through CVD method or sputtering method and form.Particularly, as conducting film 322 to 326, can use aluminium (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si) etc.In addition, both can use, can use the compound that comprises above-mentioned metal again with the alloy of above-mentioned metal as main component.Conducting film 322 to 326 can adopt the film of the above-mentioned metal of use or the film of the above-mentioned metal of range upon range of a plurality of uses to form separately.
As being the instance of the alloy of main component with aluminium, can enumerate with aluminium is main component and the alloy that comprises nickel.In addition, also can enumerate with aluminium be main component and comprise nickel and a side of carbon and silicon or both sides' alloy as an example.The resistance value of aluminium or aluminium silicon is very low and it is cheap, so optimum as the material that forms conducting film 322 to 326.Especially, compare with the aluminium film, aluminium silicon (Al-Si) film can prevent in the resist roasting, to produce hillock (hillock) when conducting film 322 to 326 is carried out composition.In addition, also can in the aluminium film, sneak into the Cu about 0.5% and replace silicon (Si).
Conducting film 322 to 326 for example preferably adopts the laminated construction of barrier film, aluminium silicon (Al-Si) film and barrier film; The laminated construction of barrier film, aluminium silicon (Al-Si) film, titanium nitride (TiN) film and barrier film.Note the film that barrier film just is to use the nitride of nitride, molybdenum or the molybdenum of titanium, titanium to form.If sandwich aluminium silicon (Al-Si) film ground forms barrier film, then can further prevent to produce the hillock of aluminium or aluminium silicon.In addition; If use the titanium of element to form barrier film with high reproducibility; Even on island semiconductor film 305 to 307, be formed with thin oxide-film; Also by this oxide-film of titanium reduction that is included in the barrier film, and conducting film 323 to 326 can contact with island semiconductor film 305 to 307 well.In addition, also can use by range upon range of a plurality of barrier films.In the case, for example, can make conducting film 322 to 326 have the range upon range of in order five-layer structure that titanium, titanium nitride, aluminium silicon, titanium, titanium nitride are arranged.
Notice that conducting film 324,325 is connected to the high concentration impurities district 315 of n channel-type TFT318.Conducting film 325,326 is connected to the high concentration impurities district 315 of n channel-type TFT319.Conducting film 323 is connected to the high concentration impurities district 312 of p channel-type TFT317.All impurity ranges 312 among the p channel-type TFT317 are electrically connected by conducting film 323.In addition, two gate electrodes 309 are electrically connected in p channel-type TFT317, and as the MOS varactor.
Then, shown in Figure 14 A, cover conducting film 322 to 326 ground and form dielectric film 330, the part of conducting film 322 forms contact hole with exposing in this dielectric film 330 afterwards.And, in this contact hole, form conducting film 331 contiguously with conducting film 322.So long as can be used for the material of conducting film 322 to 326, just can be used for the material of conducting film 331.
Dielectric film 330 can use organic resin film, inorganic insulating membrane or type siloxane dielectric film to form.When adopting organic resin film, for example can use acrylic acid, epoxy, polyimides, polyamide, polyvinylphenol, benzocyclobutene etc.When adopting inorganic insulating membrane, can use comprise silica, silicon oxynitride, silicon oxynitride or with DLC (diamond-like-carbon) as the film of the carbon of representative etc.Note, can be formed for forming the mask of peristome through liquid droplet ejection method or print process through photoetching process.In addition, dielectric film 330 can adopt CVD method, sputtering method, liquid droplet ejection method or print process to wait according to its material to form.
Then, a part forms the conducting film 332 as antenna contiguously with conducting film 331.Conducting film 332 can use the metal of silver (Ag), gold (Au), copper (Cu), palladium (Pd), chromium (Cr), platinum (Pt), molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), aluminium (Al), iron (Fe), cobalt (Co), zinc (Zn), tin (Sn), nickel (Ni) etc. to form.Conducting film 332 can also use by film that forms as the alloy of main component with above-mentioned metal or the film that is formed by the compound that comprises above-mentioned metal except using the film that is formed by above-mentioned metal.Conducting film 332 can use above-mentioned film with individual layer, also can the above-mentioned a plurality of films of range upon range of use.
Conducting film 332 can wait and form through CVD method, sputtering method, print process such as silk screen printing or hectographic printing etc., liquid droplet ejection method, drippage (dispenser) method, coating method, photoetching process, vapour deposition method.
For example; Under the situation that adopts silk screen print method; Through printing conductive cream optionally on dielectric film 330, can form conducting film 332, said conductive paste is through being that the particle with conductivity (electric conductor particle) of a few nm to tens μ m is dispersed in the organic resin and forms with particle diameter.The electric conductor particle can use silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), tin (Sn), plumbous (Pb), zinc (Zn), chromium (Cr) or titanium (Ti) to wait and form.The electric conductor particle can also be formed or used the compound that comprises above-mentioned metal to form except being formed by above-mentioned metal by the alloy that with above-mentioned metal is main component.In addition, also can use the particulate or the dispersed nano particle of silver halide.In addition, can use conducts such as polyimides, siloxane resin, epoxy resin, silicones to be included in the organic resin in the conductive paste.
As an example of the alloy of above-mentioned metal, can enumerate following combination: silver (Ag) and palladium (Pd), silver (Ag) and platinum (Pt), gold (Au) and platinum (Pt), golden (Au) and palladium (Pd), silver-colored (Ag) and copper (Cu).In addition, for example also can use through by the electric conductor particle that obtains of silver (Ag) copper coated (Cu) etc.
Note, when forming conducting film 332, preferably after through print process or liquid droplet ejection method extrusion conductive paste, carry out roasting.For example, be under the situation of electric conductor particle (for example particle diameter is more than the 1nm and below the 100nm) as conductive paste of main component adopting with silver, can form conducting film 332 through carrying out roasting with 150 ℃ to 300 ℃ temperature range.Roasting can be annealed through the lamp that uses infrared lamp, xenon lamp, halogen lamp etc. and carried out, and also can carry out through the furnace annealing (furnace annealing) that uses electric furnace.In addition, also can carry out through the laser annealing method of using excimer laser, Nd:YAG laser.In addition, also can use with scolder or the lead-free solder particulate as main component, in the case, preferably using particle diameter is the particulates below the 20 μ m.Scolder or lead-free solder have advantage cheaply.
Through using print process or liquid droplet ejection method, can form conducting film 332, and not use the mask that is used to make public.In addition, liquid droplet ejection method is different with photoetching process with print process, can for example not be removed through etching by waste material.In addition, owing to need not use the expensive mask that is used to make public, so can suppress to make the cost of semiconductor device.
Then, shown in Figure 14 B, cover conducting film 331 and conducting film 332 ground and on dielectric film 330, form dielectric film 333.Dielectric film 333 can use organic resin film, inorganic insulating membrane or type siloxane dielectric film to form.When adopting organic resin film, for example can use acrylic acid, epoxy, polyimides, polyamide, polyvinylphenol, benzocyclobutene etc.When adopting inorganic insulating membrane, can use comprise silica, silicon oxynitride, silicon oxynitride or with DLC (diamond-like-carbon) as the film of the carbon of representative etc.Note, can be formed for forming the mask of peristome through liquid droplet ejection method or print process through photoetching process.In addition, dielectric film 333 can pass through formation such as CVD method, sputtering method, liquid droplet ejection method or print process according to its material.
Then, shown in Figure 15 A, from substrate 300 peel off from dielectric film 303 to dielectric film 333 to comprise be the semiconductor element of representative and the layer of various conducting films (below be called " element cambium layer 334 ") with TFT.In the present embodiment, first sheeting 335 is fitted in the surface of dielectric film 333 1 sides of element cambium layer 334, and utilizes physically power from substrate 300 scraper element cambium layer 334.Peel ply 302 also can be not to be removed integral body and a part of state that stays.
In addition, above-mentioned peeling off also can be carried out through the etching method that utilizes peel ply 302.In the case, the part of peel ply 302 is exposed the landform grooving.This groove waits through processing, the photoetching process of cutting, rule, utilize the laser that contains UV light and forms.As long as groove has the degree of depth of the degree that peel ply 302 exposes.And, use and fluoridize halogen as etching gas, import this gas from groove.In the present embodiment, for example use ClF 3(chlorine trifluoride), under following condition, carry out: temperature is that 350 ℃, flow are that 300sccm, air pressure are that 6Torr, time are 3h.In addition, also can use at ClF 3The gas of mixed with nitrogen in the gas.Through using ClF 3Deng fluoridizing halogen, optionally the etching peel ply 302, and at the bottom of TFT317 to 319 peeling liner 300.Notice that fluoridizing halogen can be gas or liquid.
Then, shown in Figure 15 B, on second sheeting 336 being fitted in through above-mentioned surface of peeling off the element cambium layer 334 that has exposed after, from first sheeting, 335 scraper element cambium layer 334.
Note, will be formed on corresponding to the semiconductor element of a plurality of semiconductor devices under the situation on the substrate 300, each semiconductor device disjunction element cambium layer 334.Can use laser irradiation device, cutter sweep, chalker to wait and carry out disjunction.
Notice that though the instance that on the substrate identical with semiconductor element, forms antenna has been described in the present embodiment, the present invention is not limited to this structure.Also can the antenna that form separately be electrically connected with integrated circuit.In the case, can make antenna and integrated circuit pressing, they are electrically connected through using anisotropic conducting film (ACF) or anisotropic conductive cream (ACP) etc.In addition, also can use electroconductive binder such as silver paste, copper cream or carbon paste etc.; Perhaps welding waits and connects.
Note, also can be after accomplishing the semiconductor device shown in Figure 15 B, cover dielectric film 333 ground the 3rd sheeting of fitting, and the side or the both sides that carry out heat treated and pressurized treatments fit second membrane material 336 and the 3rd sheeting each other.As second sheeting 336, the 3rd sheeting, can use hot melt film etc.In addition, also can not peel off first sheeting 335 first sheeting 335 and second sheeting 336 are fitted, and not prepare the 3rd sheeting.
In addition, as second sheeting 336, the 3rd sheeting, also can use the film that has applied antistatic treatment that prevents static etc. (below be called antistatic film).Can seal through using antistatic film, when as product treatment, suppress semiconductor element and receive bad influence of bringing from external static electrification etc.
As antistatic film, can enumerate following type: blending has the type that can prevent charged material (antistatic agent) in film; Film self has the type that prevents charged effect; And the type etc. that on film, applies antistatic agent.Antistatic agent can use non-ionic polymers, anionic polymer, cationic polymer, non-ionic surfactant, teepol, cation interfacial active agent, both sexes interfacial agent.In addition, oxide of metal, indium and tin (ITO) etc. also can be used as antistatic agent.In addition, as material, can use olefine kind resin, ABS resin, styrene resin, PMMA resin, polycarbonate resin, PVC polyester resin, polyamide, sex change PPO resin etc. with the film that prevents charged effect.
Notice that present embodiment can make up with above-mentioned execution mode and embodiment and implement.
Embodiment 8
In the present embodiment, use the transistor that is formed on the single crystalline substrate that the instance of making semiconductor device of the present invention is described.Owing to be formed on the inhomogeneities that transistor on the single crystalline substrate can suppression characteristic, so can suppress to be used for the transistorized number of semiconductor device.
At first, shown in Figure 16 A, on Semiconductor substrate 2300, be formed for making the electric element separating insulation film 2301 that separates of semiconductor element by dielectric film.Through forming element separating insulation film 2301, can be used in the transistorized zone of formation (component forming region) 2302 and separate with component forming region 2303 electricity.
As Semiconductor substrate 2300, for example can use monocrystalline substrate with n type or p type conduction type, compound semiconductor substrate (GaAs substrate, InP substrate, GaN substrate, SiC substrate, Sapphire Substrate, ZnSe substrate etc.) and use the applying method or SOI (silicon-on-insulator) substrate that SIMOX (injecting oxygen isolates) method is made etc.
For the formation method of element separating insulation film 2301, can use selective oxidation method (LOCOS method) or zanjon partition method etc.
In addition, present embodiment shows and uses the monocrystalline substrate with n type conduction type as Semiconductor substrate 2300, and in component forming region 2303, forms the instance of p trap 2304.Being formed on p trap 2304 in the component forming region 2303 of Semiconductor substrate 2300 can optionally be incorporated in the component forming region 2303 through the impurity element that will give p type conduction type and form.As the impurity element of giving the p type, can use boron (B), aluminium (Al), gallium (Ga) etc.In addition, have in use under the situation of Semiconductor substrate as Semiconductor substrate 2300 of p type conduction type, the impurity element of giving the n type optionally is incorporated into forms the n trap in the component forming region 2302 and get final product.
Note, in the present embodiment, because use Semiconductor substrate as Semiconductor substrate 2300, so component forming region 2302 is not introduced impurity element with n type conduction type.But, also can give the impurity element of n type and in component forming region 2302, form the n trap through introducing.As the impurity element of giving the n type, can use phosphorus (P) or arsenic (As) etc.
Then, shown in Figure 16 B, cladding element forms 2302,2303 ground, district and forms dielectric film 2305,2306 respectively.The silicon oxide film that in the present embodiment, will be formed on component forming region 2302,2303 by means of making Semiconductor substrate 2300 thermal oxidations is as dielectric film 2305,2306.In addition, also can make the surfaces nitrided oxygen silicon nitride membrane that forms of silicon oxide film, and have the layer of silicon oxide film and oxygen silicon nitride membrane to be used as dielectric film 2305,2306 range upon range of through after forming silicon oxide film, carrying out nitrogen treatment by means of thermal oxidation.
In addition, also can such as stated using plasma handle and form dielectric film 2305,2306.For example, handle surface oxidation or the nitrogenize that makes Semiconductor substrate 2300, form the silica (SiO that is used as dielectric film 2305,2306 at component forming region 2302,2303 through utilizing high-density plasma x) film or silicon nitride (SiN x) film.
Then, shown in Figure 16 C, cover dielectric film 2305,2306 ground and form conducting film.In the present embodiment, show use range upon range of in order conducting film 2307 and the instance of conducting film 2308 as conducting film.As conducting film, can use the individual layer conducting film, also can use the range upon range of structure that conducting film more than three layers is arranged.
As conducting film 2307,2308, can use tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminium (Al), copper (Cu), chromium (Cr), niobium (Nb) etc.In addition, as conducting film 2307,2308, except using the film that forms by above-mentioned metal, the film that can also use the compound that comprises above-mentioned metal by film that forms as the alloy of main component with above-mentioned metal or use to form.Perhaps, also can use the semiconductor film semiconductors such as polysilicon that the impurity element give conductivity such as phosphorus etc. form that mix are formed.In the present embodiment, use tantalum nitride to form conducting film 2307, and use tungsten to form conducting film 2308.
Then, shown in Figure 17 A, become reservation shape, come on dielectric film 2305,2306, to form gate electrode 2309,2310 through conducting film 2307,2308 processing (composition) with range upon range of setting.
Then, shown in Figure 17 B, cladding element forms 2302 ground, district and optionally forms mask 2311 by resist.Then, component forming region 2303 is introduced impurity element.Except mask 2311, gate electrode 2310 is also as mask, so by means of the introducing of above-mentioned impurity element, in p trap 2304, form impurity range 2312 and channel formation region 2313 as source region or drain region.As impurity element, use the impurity element of giving the impurity element of n type or giving the p type.As the impurity element of giving the n type, can use phosphorus (P) or arsenic (As) etc.As the impurity element of giving the p type, can use boron (B), aluminium (Al), gallium (Ga) etc.In the present embodiment, use phosphorus (P) as impurity element.
Then, after removing mask 2311, shown in Figure 17 C, cladding element forms 2303 ground, district and optionally forms mask 2314 by resist.Then, component forming region 2302 is introduced impurity element.Except mask 2314, gate electrode 2309 is also as mask, so by means of the introducing of above-mentioned impurity element, the Semiconductor substrate 2300 component forming region 2302 in forms impurity range 2315 and channel formation region 2316 as source region or drain region.As impurity element, use the impurity element of giving the impurity element of n type or giving the p type.As the impurity element of giving the n type, can use phosphorus (P) or arsenic (As) etc.As the impurity element of giving the p type, can use boron (B), aluminium (Al), gallium (Ga) etc.In the present embodiment, use impurity element (for example boron (B)) with conduction type different with the impurity element of in Figure 17 B, component forming region 2303 being introduced.
Then, shown in Figure 18 A, cover dielectric film 2305,2306, gate electrode 2309,2310 ground formation dielectric film 2317.Then, in dielectric film 2317, form contact hole, the part of impurity range 2312,2315 is exposed.Then, form the conducting film 2318 that is connected with impurity range 2312,2315 through contact hole.Conducting film 2318 can be through formation such as CVD method or sputtering methods.
Dielectric film 2317 can use inorganic insulating membrane, organic resin film or type siloxane dielectric film to form.When adopting inorganic insulating membrane, can use comprise silica, silicon oxynitride, silicon oxynitride, with DLC (diamond-like-carbon) as the film of the carbon of representative etc.When adopting organic resin film, for example can use acrylic acid, epoxy, polyimides, polyamide, polyvinylphenol, benzocyclobutene etc.In addition, dielectric film 2317 can pass through formation such as CVD method, sputtering method, liquid droplet ejection method or print process according to its material.
Notice that the transistor that is used for semiconductor device of the present invention is not limited to the structure that is illustrated in the present embodiment on the accompanying drawing.For example, also can be the wrong structure of reciprocal cross.
Then, shown in Figure 18 B, film 2324 between cambium layer.Film 2324 forms contact hole between etch layer then, so that the part of conducting film 2318 is exposed.Interlayer film 2324 is not limited to resin, also can still, from the viewpoint of flatness, be preferably resin for other films of CVD oxide-film etc.In addition, also can the usability photopolymer resin and do not use etching to form contact hole.Then, on interlayer film 2324, form the wiring 2325 that contacts with conducting film 2318 through contact hole.
Then, form conducting film 2326 contiguously with wiring 2325 as antenna.Conducting film 2326 can use silver (Ag), gold (Au), copper (Cu), palladium (Pd), chromium (Cr), platinum (Pt), molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), aluminium (Al), iron (Fe), cobalt (Co), zinc (Zn), tin (Sn), nickel metals such as (Ni) to form.As conducting film 2326, except using the film that forms by above-mentioned metal, the film that can also use the compound that comprises above-mentioned metal by film that forms as the alloy of main component with above-mentioned metal or use to form.Conducting film 2326 can use above-mentioned film with individual layer, also can the above-mentioned a plurality of films of range upon range of use.
Conducting film 2326 can wait and form through using CVD method, sputtering method, print process such as silk screen printing or hectographic printing etc., liquid droplet ejection method, drop method, coating method, photoetching process, vapour deposition method.
Notice that in the present embodiment although understand the instance that on the substrate identical with semiconductor element, forms antenna, but the present invention is not limited to this structure.Also can after forming semiconductor element, the antenna that forms separately be electrically connected with integrated circuit.In the case, can make antenna and integrated circuit pressing, they are electrically connected through using anisotropic conducting film (ACF) or anisotropic conductive cream (ACP) etc.In addition, also can use conductive adhesives such as silver paste, copper cream or carbon paste or welding to wait connects.
Through adopting above-mentioned manufacturing approach, semiconductor device of the present invention can have and on Semiconductor substrate, forms transistor, and has the structure of thin-film secondary battery above that.By means of said structure, can provide that further realization is changed as thin as a wafer, the semiconductor device of miniaturization.
Notice that present embodiment can make up with above-mentioned execution mode and embodiment and implement.
Embodiment 9
In the present embodiment, use the structure of the rectification circuit of the present invention shown in top view illustration Fig. 3 A.
Figure 11 illustrates the vertical view of rectification circuit of the present invention.In Figure 11, Reference numeral 103 is equivalent to variable capacitance, and 104 are equivalent to diode, and 105 are equivalent to diode, and 106 are equivalent to smoothing capacity.In Figure 11, use p channel-type MOS varactor as variable capacitance 103.In addition, use the n channel transistor as diode 104, diode 105.
Current potential to conducting film 130 supply input A1.And conducting film 130 is connected with conducting film 132.The part of conducting film 132 plays the effect as first electrode of the MOS varactor of variable capacitance 103.The impurity range of the semiconductor film 131 that variable capacitance 103 is had plays the effect of second electrode of MOS varactor, and its integral body is connected to conducting film 134.
To the current potential of conducting film 137 supply input A2, and the current potential of conducting film 137 is supplied to the circuit of back level as the current potential of output OUT2.Conducting film 137 is connected with the source region of the semiconductor film 135 that diode 104 is had.The part of conducting film 133 plays the effect of the gate electrode of diode 104, and is connected to conducting film 137.The drain region of the semiconductor film 135 that diode 104 is had is connected to conducting film 134.
The part of conducting film 143 plays the effect of the gate electrode of diode 105, and is connected to conducting film 134.The source region of the semiconductor film 136 that diode 105 is had is connected to conducting film 134.The drain region of the semiconductor film 136 that diode 105 is had is connected to conducting film 138.The current potential of conducting film 138 is supplied to the circuit of back level as the current potential of output OUT1.
Semiconductor film 140 sandwich gate insulating films and conducting film 141 that smoothing capacity 106 is had are overlapping.Conducting film 141 is connected to conducting film 138, and semiconductor film 140 is connected to conducting film 137.The effect of smoothing capacity 106 is played in the zone that semiconductor film 140 and conducting film 141 sandwich gate insulating films overlap each other.
In addition, in diode 104, the effect of negative electrode is played in the drain region of semiconductor film 135, and the effect of anode is played with gate electrode in the source region.In addition, in diode 105, the effect of negative electrode is played in the drain region of semiconductor film 136, and the effect of anode is played with gate electrode in the source region.
Rectification circuit of the present invention can use the technology of common thin-film transistor to form.Therefore, can suppress to make rectification circuit, even make the cost of the semiconductor device that uses this rectification circuit.

Claims (42)

1. rectification circuit comprises:
Variable capacitor;
Be used for alternating voltage first diode and second diode that carry out rectification to input;
First input end;
Second input; And
Output,
The capacitance of wherein said variable capacitor changes according to the amplitude of the alternating voltage of said input,
Said variable capacitor and said first diode are connected in series between said first input end and said output successively, and
Said second diode and said first diode are connected in series between said second input and said output successively, so that the forward of said diode is consistent.
2. rectification circuit according to claim 1, wherein said variable capacitor are p channel-type MOS varactors.
3. rectification circuit according to claim 1 also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
4. rectification circuit comprises:
Variable capacitor;
Be used for alternating voltage first diode and second diode that carry out rectification to input;
Capacitor;
First input end;
Second input; And
Output,
The capacitance of wherein said variable capacitor changes according to the amplitude of the alternating voltage of said input,
Said capacitor and said first diode are connected in series between said first input end and said output successively,
Said second diode and said first diode are connected in series between said second input and said output successively, so that the forward of said first diode and said second diode is consistent, and
Said variable capacitor and said second diode are connected in parallel between said second input and said first diode.
5. rectification circuit according to claim 4, wherein said variable capacitor are n channel-type MOS varactors.
6. rectification circuit according to claim 4 also comprises:
Be connected the resistor between said capacitor and said first diode.
7. rectification circuit comprises:
Variable capacitor;
Be used for alternating voltage first diode, second diode and the 3rd diode that carry out rectification to input;
Input; And
Output,
The capacitance of wherein said variable capacitor changes according to the amplitude of the alternating voltage of said input,
Said variable capacitor and said first diode are connected in series between said input and said output successively,
Said the 3rd diode, said second diode and said first diode are connected in series between said input and said output successively, so that the forward of said first diode, said second diode and said the 3rd diode is consistent, and
Said variable capacitor, said second diode and said the 3rd diode are connected in parallel between said input and said first diode.
8. rectification circuit according to claim 7, wherein said variable capacitor are n channel-type MOS varactors.
9. rectification circuit according to claim 7 also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
10. rectification circuit comprises:
Variable capacitor;
Be used for alternating voltage first diode, second diode and the 3rd diode that carry out rectification to input;
First input end, second input, first output and second output,
The capacitance of wherein said variable capacitor changes according to the amplitude of the alternating voltage of said input,
Said variable capacitor and said first diode are connected in series between said first input end and said first output successively,
Said second diode and said first diode are connected in series between said second input and said first output successively, so that the forward of said first diode and said second diode is consistent, and
Said the 3rd diode, said variable capacitor and said first diode are connected in series between said second output and said first output successively, so that the forward of said first diode and said the 3rd diode is consistent.
11. rectification circuit according to claim 10, wherein said variable capacitor are n channel-type MOS varactors.
12. rectification circuit according to claim 10 also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
13. rectification circuit according to claim 10 also comprises:
Be connected the capacitor between said second diode and said second output.
14. a rectification circuit comprises:
First variable capacitor;
Be used for alternating voltage first diode, second diode, the 3rd diode and the 4th diode that carry out rectification to input;
Second variable capacitor;
First input end;
Second input; And
Output,
The capacitance of wherein said first variable capacitor changes according to the amplitude of the alternating voltage of said input,
Said first variable capacitor, said second variable capacitor and said first diode are connected in series between said first input end and said output successively,
Said first variable capacitor, said the 3rd diode, said second diode and said first diode are connected in series between said first input end and said output successively,
Said the 4th diode, said the 3rd diode, said second diode and said first diode are connected in series between said second input and said output successively; So that the forward of said first diode, said second diode, said the 3rd diode and said the 4th diode is consistent, and
Said second variable capacitor, said the 3rd diode and said second diode are connected in parallel between said first variable capacitor and said first diode.
15. rectification circuit according to claim 14, wherein said first variable capacitor and said second variable capacitor are p channel-type MOS varactors.
16. rectification circuit according to claim 14 also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
17. rectification circuit according to claim 14 also comprises:
The capacitor that is connected in parallel with said the 3rd diode and said the 4th diode.
18. a rectification circuit comprises:
First variable capacitor;
Be used for alternating voltage first diode, second diode, the 3rd diode and the 4th diode that carry out rectification to input;
Second variable capacitor;
First input end;
Second input;
First output; And
Second output,
The capacitance of wherein said first variable capacitor changes according to the amplitude of the alternating voltage of said input,
Said second variable capacitor and said first diode are connected in series between said first input end and said first output successively,
Said the 4th diode, said the 3rd diode, said second diode and said first diode are connected in series between said second output and said first output successively; So that the forward of said first diode, said second diode, said the 3rd diode and said the 4th diode is consistent
Said first variable capacitor that is connected in series successively and said second variable capacitor and said the 3rd diode and said second diode are connected in parallel, and
Said second diode and said first diode are connected in series between said second input and said first output successively.
19. rectification circuit according to claim 18, wherein said first variable capacitor and said second variable capacitor are p channel-type MOS varactors.
20. rectification circuit according to claim 18 also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
21. rectification circuit according to claim 18 also comprises:
The capacitor that is connected in parallel with said the 3rd diode and said the 4th diode.
22. a semiconductor device comprises:
Antenna; And
Be used for the rectification circuit that carries out rectification to from the alternating voltage of said antenna provision, said rectification circuit comprises variable capacitor, first diode, second diode, first input end, second input and output,
The capacitance of wherein said variable capacitor changes according to the amplitude of said alternating voltage,
Said variable capacitor and said first diode are connected in series between said first input end and said output successively, and
Said second diode and said first diode are connected in series between said second input and said output successively, so that the forward of said first diode and said second diode is consistent.
23. semiconductor device according to claim 22, wherein said variable capacitor are p channel-type MOS varactors.
24. semiconductor device according to claim 22, wherein said rectification circuit also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
25. a semiconductor device comprises:
Antenna; And
Be used for the rectification circuit that carries out rectification to from the alternating voltage of said antenna provision, said rectification circuit comprises variable capacitor, capacitor, first diode, second diode, first input end, second input and output,
The capacitance of wherein said variable capacitor changes according to the amplitude of said alternating voltage,
Said capacitor and said first diode are connected in series between said first input end and said output successively,
Said second diode and said first diode are connected in series between said second input and said output successively, so that the forward of said first diode and said second diode is consistent, and
Said variable capacitor and said second diode are connected in parallel between said second input and said first diode.
26. semiconductor device according to claim 25, wherein said variable capacitor are n channel-type MOS varactors.
27. semiconductor device according to claim 25, wherein said rectification circuit also comprises:
Be connected the resistor between said capacitor and said first diode.
28. a semiconductor device comprises:
Antenna; And
Be used for the rectification circuit that carries out rectification to from the alternating voltage of said antenna provision, said rectification circuit comprises variable capacitor, first diode, second diode, the 3rd diode, input and output,
The capacitance of wherein said variable capacitor changes according to the amplitude of said alternating voltage,
Said variable capacitor and said first diode are connected in series between said input and said output successively,
Said the 3rd diode, said second diode and said first diode are connected in series between said input and said output successively, so that the forward of said first diode, said second diode and said the 3rd diode is consistent, and
Said variable capacitor, said second diode and said the 3rd diode are connected in parallel between said input and said first diode.
29. semiconductor device according to claim 28, wherein said variable capacitor are n channel-type MOS varactors.
30. semiconductor device according to claim 28, wherein said rectification circuit also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
31. a semiconductor device comprises:
Antenna; And
Be used for to carry out the rectification circuit of rectification from the alternating voltage of said antenna provision; Said rectification circuit comprises variable capacitor, first diode, second diode, the 3rd diode, first input end, second input, first output and second output
The capacitance of wherein said variable capacitor changes according to the amplitude of said alternating voltage,
Said variable capacitor and said first diode are connected in series between said first input end and said first output successively,
Said second diode and said first diode are connected in series between said second input and said first output successively, so that the forward of said first diode and said second diode is consistent, and
Said the 3rd diode, said variable capacitor and said first diode are connected in series between said second output and said first output successively, so that the forward of said first diode and said the 3rd diode is consistent.
32. semiconductor device according to claim 31, wherein said variable capacitor are n channel-type MOS varactors.
33. semiconductor device according to claim 31, wherein said rectification circuit also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
34. semiconductor device according to claim 31, wherein said rectification circuit also comprises:
Be connected the capacitor between said second diode and said second output.
35. a semiconductor device comprises:
Antenna; And
Be used for to carry out the rectification circuit of rectification from the alternating voltage of said antenna provision; Said rectification circuit comprises first variable capacitor, second variable capacitor, first diode, second diode, the 3rd diode, the 4th diode, first input end, second input and output
The capacitance of wherein said first variable capacitor changes according to the amplitude of said alternating voltage,
Said first variable capacitor, said second variable capacitor and said first diode are connected in series between said first input end and said output successively,
Said first variable capacitor, said the 3rd diode, said second diode and said first diode are connected in series between said first input end and said output successively,
Said the 4th diode, said the 3rd diode, said second diode and said first diode are connected in series between said second input and said output successively; So that the forward of said first diode, said second diode, said the 3rd diode and said the 4th diode is consistent, and
Said second variable capacitor, said the 3rd diode and said second diode are connected in parallel between said first variable capacitor and said first diode.
36. semiconductor device according to claim 35, wherein said first variable capacitor and said second variable capacitor are p channel-type MOS varactors.
37. semiconductor device according to claim 35, wherein said rectification circuit also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
38. semiconductor device according to claim 35, wherein said rectification circuit also comprises:
The capacitor that is connected in parallel with said the 3rd diode and said the 4th diode.
39. a semiconductor device comprises:
Antenna; And
Be used for to carry out the rectification circuit of rectification from the alternating voltage of said antenna provision; Said rectification circuit comprises first variable capacitor, second variable capacitor, first diode, second diode, the 3rd diode, the 4th diode, first input end, second input, first output and second output
The capacitance of wherein said first variable capacitor changes according to the amplitude of said alternating voltage,
Said second variable capacitor and said first diode are connected in series between said first input end and said first output successively,
Said the 4th diode, said the 3rd diode, said second diode and said first diode are connected in series between said second output and said first output successively; So that the forward of said first diode, said second diode, said the 3rd diode and said the 4th diode is consistent
Said first variable capacitor that is connected in series successively and said second variable capacitor and said the 3rd diode and said second diode are connected in parallel, and
Said second diode and said first diode are connected in series between said second input and said first output successively.
40. according to the described semiconductor device of claim 39, wherein said first variable capacitor and said second variable capacitor are p channel-type MOS varactors.
41. according to the described semiconductor device of claim 39, wherein said rectification circuit also comprises:
The capacitor that is connected in parallel with said first diode and said second diode.
42. according to the described semiconductor device of claim 39, wherein said rectification circuit also comprises:
The capacitor that is connected in parallel with said the 3rd diode and said the 4th diode.
CN2007101499587A 2006-10-06 2007-10-08 Rectifier circuit, semiconductor device using the circuit, and driving method therefor Expired - Fee Related CN101159388B (en)

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US8351226B2 (en) 2013-01-08

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